Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Oled Gmbh

Siteco Gmbh

Gertrud Kräuter

Berthold Hahn

Alan Piquette

Herbert Brunner

Volker Härle

Maxim N Tchoul

Andreas Plössl

Darshan Kundaliya

Georg Bogner

Günter Waitl

Michael Zitzlsperger

Krister Bergenek

Bert Braune

Bernd Barchmann

Adam Scotch

Ulrich Jacob

Rainer Butendeich

Andreas Plöβl

Harald Jäger

Johann Ramchen

Kathy Schmidtke

Andreas Plößl

Markus Zeiler

Dieter Eissler

Thomas Dreeben

Thomas Höfer

Matthias Loster

Bernd Böhm

Mary Ann Johnson

Clemens Meyer

Torsten Pietzonka

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of &#x2264;30 &#x3bc;m.

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Optoelectronic device and method of producing an optoelectronic device

A method of making a wavelength converter includes (a) combining a luminescent material and inorganic nanoparticles with a liquid methoxy methyl polysiloxane precursor to form a liquid dispersion, the precursor having a methoxy content of 10 to 50 weight percent (wt %), the inorganic nanoparticles including at least 10 weight percent of the dispersion; (b) applying the liquid dispersion to a non-stick surface; (c) curing the liquid dispersion to form a filled polymer sheet; and (d) cutting the sheet to form individual wavelength converters having a desired shape.

Wavelength converter having a polysiloxane material, method of making, and solid state lighting device containing same

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method for producing an optoelectronic component includes providing a semiconductor capable of emitting primary radiation, providing an alkoxy-functionalized polyorganosiloxane resin and crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane, wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

Method for producing an optoelectronic component, and optoelectronic component

An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Optoelectronic component having a conversation element with a high refractive index

A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a method for producing a converter element providing at least one phosphor and a liquid polysiloxane resin and preparing a cured polysiloxane powder from a first fraction of the liquid polysiloxane resin. The method further includes preparing a mixture including the at least one phosphor, the cured polysiloxane powder and a second fraction of the liquid polysiloxane resin, casting and curing the mixture to a cured layer and singulating the cured layer.

Method for producing a converter element, converter element and light emitting device

A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

Method for producing a light-emitting diode

A carrier for an optoelectronic unit has a carrier material which includes polyethylene terephthalate which contains reflector particles and a further filler. Methods for the production of the optoelectronic unit and the carrier are also disclosed.

Carrier, optoelectronic unit comprising a carrier and methods for the production of both

A method can be used to produce a housing for an optoelectronic semiconductor device. A reflector part, which has an inner area configured to reflect electromagnetic radiation, is encased in places with a housing material using an injection molding method. The inner area of the reflector part remains free of the housing material at least in places. The reflector part is formed with a first plastic material and the housing material is formed with a second plastic material that is different than the first plastic material. The first plastic material and the second plastic material differ from one another with regard to at least thermal stability or resistance to electromagnetic radiation.

Housing that includes reflector part and housing material formed with plastic material

An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.

Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component

An optoelectronic semiconductor component includes at least one radiation-emitting semiconductor chip including a radiation-outcoupling face through which at least some of electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip; and at least one radiation-transmissive body arranged at least in places downstream of the semiconductor chip on its radiation-outcoupling face, which body is in at least indirect contact with the semiconductor chip, wherein the radiation-transmissive body is formed with at least one polymer or contains at least one polymer, and one monomer of the polymer is formed with at least one silazane.

Optoelectronic semiconductor component

An optoelectronic component includes a housing which includes a first partial region having a first thermoplastic material crosslinked by irradiation and a second partial region having a second thermoplastic material, a recess in the housing, and a radiation-emitting device disposed in the recess.

Optoelectronic component and method for the production thereof

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

A housing for an optoelectronic component including a main housing body formed by a first plastics material, and which has a recess, and a coating formed by a second plastics material, and which, at least in a region of the recess, connects at least in places to the main housing body and is in direct contact with the main housing body, wherein the first plastics material is different from the second plastics material, and the first plastics material and the second plastics material differ from one another with regard to at least one of the following material properties: temperature resistance with regard to discoloration, temperature resistance with regard to deformation, temperature resistance with regard to destruction, and resistance to electromagnetic radiation.

Housing for an optoelectronic component and method for producing a housing

A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.

Growing community of inventors

Wuppertal, Germany

Gertrud Kräuter