Infineon Technologies Ag

Siemens Aktiengesellschaft

Infineon Technology Ag

Gertrud Falk

Michael Sebald

Jörg Rottstegge

Christian Eschbaumer

Waltraud Herbst

Eberhard Kühn

Christoph Hohle

Rainer Leuschner

Albert Hammerschmidt

Eberhard Kuehn

Ernst-Christian Richter

J&ouml;rg Rottstegge

Kerstin Seibold

Ernst Christian Richter

Eberhard K&uuml;hn

Ewald Gunther

Siew Siew Yip

Marion Kern

The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.

Negative resist process with simultaneous development and aromatization of resist structures

A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in an aqueous phase to the structured resist and, after chemical amplification is complete, excess agent is removed by an aqueous wash medium. By using water as a solvent for the amplification agent and as a wash medium, it is possible to avoid organic solvents that constitute an explosion hazard. Furthermore, removal of partially exposed resist sections is suppressed.

Process for modifying resist structures and resist films from the aqueous phase

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

A photoresist compound or composition achieves a uniform volume growth in a chemical expansion on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist composition comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist composition comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Photoresist compound and method for structuring a photoresist layer

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Negative resist process with simultaneous development and silylation

Photolithographic structure generation process

A plasma burner or torch for emission spectrometry comprises an induction coil for generating a plasma, an outer jacket, an inner jacket coaxial therewith, a sleeve inside the inner jacket and coaxial therewith, a capillary tube inside the sleeve and oriented along the axis of symmetry, a cooling gas feed line, a plasma gas feed line, and an aerosol gas feed line. The distance of the sleeve from the inner jacket of the plasma burner is advantageously smaller than the distance between the sleeve and the capillary tube. The sleeve preferably consists essentially of quartz. In such a plasma torch, the rate of consumption of the plasma gas as well as of the cooling gas is reduced, while the detection power of the device for elements such as boron, iron, magnesium, phosphorous and zinc is comparable to conventional standard burners.

Spectrometry plasma burner

Growing community of inventors

Erlangen, Germany

Gertrud Falk