Northrop Grumman Space & Mission Systems Corporation

Gerry Mei

Po-Hsin Liu

Jane Lee

Wayne Yoshida

Weidong Liu

Jennifer Wang

Linh Dang

Mike Barsky

Rich Lai

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

High electron mobility transistor semiconductor device and fabrication method thereof

Growing community of inventors

Manhattan Beach, CA, United States of America

Gerry Mei