Fei Comapny

Gerrit Cornelis Van Hoften

Joeri Lof

Frank Jeroen Pieter Schuurmans

Uwe Luecken

Richard Henderson

Michael Alwin William Stekelenburg

Nicola Carlo Guerrini

Abdul Raffey Faruqi

Renato Andrea Danilo Turchetta

Gregory James McMullan

Bart Jozef Janssen

Alan Frank De Jong

Maximus Theodorus Otten

In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.

Backscatter reduction in thin electron detectors

To avoid reset noise in a CMOS chip for direct particle counting, it is known to use Correlative Double Sampling: for each signal value, the pixel is sampled twice: once directly after reset and once after an integration time. The signal is then determined by subtracting the reset value from the later acquired value, and the pixel is reset again. In some embodiments of the invention, the pixel is reset only after a large number of read-outs. Applicants realized that typically a large number of events, typically approximately 10, are needed to cause a full pixel. By either resetting after a large number of images, or when one pixel of the image shows a signal above a predetermined value (for example&#xd7; the full-well capacity), the image speed can be almost doubled compared to the prior art method, using a reset after acquiring a signal.

Method for acquiring data with an image sensor

A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the center of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.

Method of using a direct electron detector for a TEM

The invention relates to a Method of protecting a direct electron detector () in a TEM. The invention involves predicting the current density on the detector before setting new beam parameters, such as changes to the excitation of condenser lenses (), projector lenses () and/or beam energy. The prediction is made using an optical model or a Look-Up-Table. When the predicted exposure of the detector is less than a predetermined value, the desired changes are made, otherwise a warning message is generated and changes to the settings are postponed.

Method of protecting a radiation detector in a charged particle instrument

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Veldhoven, Netherlands

Gerrit Cornelis Van Hoften