Abb Schweiz Ag

Abb Research Ltd.

Abb Industrie Ag

Gerold Knapp

Iulian Nistor

Richard Bloch

Enea Bianda

Vinoth Sundaramoorthy

Francisco Canales

Antonio Coccia

Luc Meysenc

Franz Zurfluh

Christoph Stemmler

Rudolf Wieser

Yanick Lobsiger

Peter D&auml;hler

Gerhard Hochstuhl

Marcel Merk

Fabiana Da Silveira Cavalcante

Alexander Heinemann

Pascal Mauron

Patrick Schmid

Thomas Friedli

The present invention relates to a method for determining an actual junction temperature (T) and/or an actual collector current (I) of an IGBT device, wherein the IGBT device has a main emitter (E) and an auxiliary emitter (E), comprising the steps of;

Method and apparatus for determining an actual junction temperature of an IGBT device

A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

System and method for monitoring in real time the operating state of an IGBT device

A controller circuit is specified, having a step-up controller, a resonant converter connected downstream of the step-up controller on the output side, a transformer, a rectifier, which rectifier is connected to the secondary winding of the transformer on the input side, and a CLL resonant circuit connected to the resonant converter and to the primary winding of the transformer, which CLL resonant circuit has a resonance capacitance and a first and a second resonance inductance. In order to reduce the switching losses, the CLL resonant circuit is embodied as a 'T' circuit.

Controller circuit and system having such a controller circuit

The document specifies a method for fault handling in a converter circuit for switching three voltage levels, in which the converter circuit has a converter subsystem provided for each phase (R,S,T), in which a top fault current path (A) or a bottom fault current path (B) in the converter subsystem is detected, the top fault current path (A) running through the first, second, third and sixth power semiconductor switches in the converter subsystem or through the first and fifth power semiconductor switches (S, S) in the converter subsystem, and the bottom fault current path (B) running through the second, third, fourth and fifth power semiconductor switches in the converter subsystem or through the fourth and sixth power semiconductor switches in the converter subsystem, and in which the power semiconductor switches are switched on the basis of a fault switching sequence. To avoid phase shorting of all the phases of the converter circuit in order to achieve a safe operating state for the converter circuit in the event of a fault, the fault switching sequence in the event of detection of the top or the bottom fault current path (A, B) is initially followed by the detection's accompanying switching status of each power semiconductor switch being recorded. In addition, in the event of detection of the top fault current path (A) the first power semiconductor switch and then the third power semiconductor are turned off, and in the event of detection of the bottom fault current path (B) the fourth power semiconductor switch and then the second power semiconductor are turned off.

Method for fault handling in a converter circuit for wiring of three voltage levels

A converter circuit with short-circuit current protection having a DC voltage circuit () is proposed, which DC voltage circuit () is formed by a DC voltage circuit subsystem (), the DC voltage circuit subsystem () having a first energy store () and a second energy store (), which is connected in series with the first energy store (), and a fuse (). Furthermore, the converter circuit has at least one pair of branches () provided for each phase (R, S, T) and connected in parallel with the DC voltage circuit (), each pair of branches () having power semiconductor switches. In order to achieve a low-inductance converter circuit, the fuse () forms the connection between the first energy store () and the second energy store (

Converter circuit with short-circuit current protection

Protection of a dynamic voltage restorer

Growing community of inventors

Ehrendingen, Switzerland

Gerold Knapp