Intel Corporation

Gerogios Dogiamis

Gilbert W Dewey

Aleksandar Aleksov

Telesphor Kamgaing

Hyung-Jin Lee

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment the semiconductor device comprises a first semiconductor layer, where first transistors are fabricated in the first semiconductor layer, and a back end stack over the first transistors. In an embodiment the back end stack comprises conductive traces and vias electrically coupled to the first transistors. In an embodiment, the semiconductor device further comprises a second semiconductor layer over the back end stack, where the second semiconductor layer is a different semiconductor than the first semiconductor layer. In an embodiment, second transistors are fabricated in the second semiconductor layer.

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Chandler, AZ, United States of America

Gerogios Dogiamis