Qorvo Us, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Triquint Semiconductor Corporation

Other

Infineon Technologies Ag

Qorvo Biotechnologies, LLC

Avago Technologies Wireless Ip, Pte. Ltd.

Zomedica Biotechnologies LLC

Gernot G Fattinger

Robert Aigner

Paul Stokes

Yazid Yusuf

George Adrian Maxim

Baker P Scott

Dirk Robert Walter Leipold

Rio Rivas

Stephan Marksteiner

Nadim Khlat

Julio C Costa

Jyrki Kaitila

Merrill Albert Hatcher, Jr

Robert Thalhammer

Alireza Tajic

Jon Chadwick

Klaus Diefenbeck

Mohammad J Modarres-Zadeh

Mudar Al-Joumayly

Andreas Tag

Alfred Gimenez

Marcus Granger-Jones

Winfried Nessler

Mikhail Shirokov

Jyothi Swaroop Sadhu

Ralph Rothemund

Mudar AlJoumayly

Michael Schaefer

Jun C Jadormio

Peter Mueller

Wolfgang Heeren

Michael Fattinger

Disclosed is a Bulk Acoustic Wave (BAW) filter structure with a conductive bridge forming an electrical loop with an electrode for reduced electrical losses. In exemplary aspects disclosed herein, the BAW filter structure includes a transducer with electrodes, a piezoelectric layer between the electrodes, and at least one conductive bridge offset from at least a portion of one of the electrodes by an insulating volume. The conductive bridge forms a first electrical loop between a medial end and a distal end of the electrode. Such a configuration reduces electrical resistance, heat resistance, and/or ohmic losses for improved electrical loss of the BAW filter structure.

Bulk acoustic wave filter structure with conductive bridge forming electrical loop with an electrode

The present disclosure relates to a Bulk Acoustic Wave (BAW) device with a substantially symmetrical structure in a vertical direction. The disclosed BAW device includes a main device region having a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top electrode and the bottom electrode, a bottom reflector section underneath the bottom electrode, a bottom substrate underneath the bottom reflector section, a top reflector section over the top electrode, and a top substrate over the bottom reflector section. Herein, the bottom reflector section, the bottom substrate, the top reflector section, and the top substrate are configured so that a neutral plane of the BAW device is positioned at a center of the piezoelectric layer.

Temperature compensated bulk acoustic wave device by neutral stress plane engineering through double sided silicon substrate integration

A fluidic device includes at least one bulk acoustic wave (BAW) resonator structure with a functionalized active region, and at least one first (inlet) port defined through a cover structure arranged over a fluidic passage containing the active region. At least a portion of the at least one inlet port is registered with the active region, permitting fluid to be introduced in a direction orthogonal to a surface of the active region bearing functionalization material. Such arrangement promotes mixing proximate to a BAW resonator structure surface, thereby reducing analyte stratification, increasing analyte binding rate, and reducing measurement time.

Fluidic device with fluid port orthogonal to functionalized active region

RF filtering circuitry comprises a first node, a second node, and a series signal path between the first node and the second node. A number of acoustic resonators are coupled to one or more of the first node and the second node via the series signal path. A first one of the acoustic resonators is associated with a first quality factor and a first electromechanical coupling coefficient. A second one of the acoustic resonators is associated with a second quality factor and a second electromechanical coupling coefficient. The first quality factor is different from the second quality factor and the first electromechanical coupling coefficient is different from the second electromechanical coupling coefficient.

Hybrid bulk acoustic wave filter

An acoustic resonator includes a first piezoelectric layer, a second piezoelectric layer, a coupler layer, a first electrode, and a second electrode. The first piezoelectric layer has a first polarity. The second piezoelectric layer has a second polarity opposite the first polarity. The coupler layer is between the first piezoelectric layer and the second piezoelectric layer. The first electrode is on the first piezoelectric layer opposite the coupler layer. The second electrode is on the second piezoelectric layer opposite the coupler layer.

Bulk acoustic wave (BAW) resonator

Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.

Phase shift structures for acoustic resonators

The present disclosure relates to a microelectronics package with vertically stacked flip-chip dies, and a process for making the same. The disclosed microelectronics package includes a module board, a first thinned flip-chip die with a through-die via, a second flip-chip die with a package contact at the bottom, and a mold compound. Herein, a top portion of the through-die via is exposed at top of the first thinned flip-chip die. The first thinned flip-chip die and the mold compound reside over the module substrate. The mold compound surrounds the first thinned flip-chip die and extends above the first thinned flip-chip die to define an opening. The second flip-chip die, which has a smaller plane size than the first thinned flip-chip die, resides within the opening and is stacked with the first thinned flip-chip die by coupling the package contact to the exposed top portion of the through-die via.

Microelectronics package with vertically stacked dies

Compensation of on-die inductive parasitics in ladder filters through negative mutual inductance between ground inductors is disclosed herein. An exemplary ladder filter includes a primary arm of series resonators and two or more shunt resonator arms connecting nodes between the series resonators to ground. The resonators of the ladder filter are disposed over a semiconductor substrate, to form a circuit die. Constructed ladder filter dice may fail to achieve design filter rejection due to inductive parasitics (e.g., undesired magnetic induction between components). A first shunt arm and a second shunt arm are provided with mutual negatively coupled inductors in order to compensate for these parasitics and improve filter performance.

Compensation of on-die inductive parasitics in ladder filters through negative mutual inductance between ground inductors

Bulk Acoustic Wave (BAW) resonators that include a modified outside stack portion and methods for fabricating such BAW resonators are provided. One BAW resonator includes a reflector, a bottom electrode, a piezoelectric layer, and a top electrode. An active region is formed where the top electrode overlaps the bottom electrode and an outside region surrounds the active region. The piezoelectric layer includes a top surface adjacent to the top electrode and a bottom surface adjacent to the bottom electrode. The piezoelectric layer further includes an outside piezoelectric portion in the outside region with a bottom surface in the outside region that is an extension of the bottom surface of the piezoelectric layer, and the outside piezoelectric portion includes an angled sidewall that resides in the outside region and extends from the top surface of the piezoelectric layer to the bottom surface of the outside piezoelectric portion in the outside region.

Bulk acoustic wave resonator with a modified outside stack portion

Systems and methods relating to improving transmit (TX) port to receive (RX) port isolation of a duplexer or multiplexer are disclosed. In some embodiments, a system includes a duplexer or multiplexer having a transmit port, a receive port, and an antenna port. The system further includes a leakage cancellation subsystem adapted to cancel a leakage signal from the TX port of the duplexer or multiplexer to the RX port of the duplexer or multiplexer across a desired cancellation bandwidth. The leakage cancellation subsystem compensates for variation of the leakage signal across the desired cancellation bandwidth, thereby improving TX port to RX port isolation over conventional systems.

Systems and methods for cancellation of leakage into a RX port of a duplexer or multiplexer

Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. To provide tuning for calibration or for dynamic filter operation, the acoustic wave tuning control circuitry is configured to bias one or more of the acoustic wave resonators with bias voltages. Biasing an acoustic wave resonator affects the resonances of the resonator, thereby allowing for the passband of the acoustic wave resonator to be tuned. Accordingly, the acoustic wave tuning control circuitry is configured to adjust the bias voltages so that the acoustic wave filter shifts the passband. In this manner, the passband of the acoustic wave filter can be tuned with high degree of accuracy and without requiring physical alterations to the acoustic wave resonators.

High-voltage converter based tuning of acoustic filters

Growing community of inventors

Ocoee, FL, United States of America

Gernot G Fattinger