Bayer Aktiengesellschaft

H.c. Starck Gmbh

H.c. Starck Ceramics Gmbh & Co. Kg

Gerhard Wötting

Christoph Schnitter

Gerhard Leimer

Peter Woditsch

Prabhat Kumar

Hans-Peter Baldus

Mathias Herrmann

Gunther Stollwerck

Richard Wu

Gerd Passing

David Meendering

Lutz Frassek

Ernst Gugel

Lawrence F McHugh

Christian Hässler

Stefan Siegel

Jurgen Hennicke

Richard Nicholson

Klaus Kramer

Martin Knoch

Bernhard Caspers

Grit Michael

Jürgen Hennicke

Hans-Jürgen Thoma

Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbO, wherein 0.5&#x3c;x&#x3c;1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.

Method for producing solid electrolyte capacitors

The invention relates to high purity MoOpowder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoOdisc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoOand MoOcontaining thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

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Sintered bodies based on niobium suboxide

The present invention is directed to bearings produced from a silicon nitride material. The silicon nitride material consists of a sintering aid selected from the group consisting of AlOand YO, silicon dioxide, and optionally, up to 10 mole %, based on the amount of silicon nitride, of an additive that reacts with silicon nitride, said additive selected from the group consisting of TiO, WO, MoOand mixtures thereof.

The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.

Silicon nitride based substrate for semi-conductor components

This invention relates to a liquid phase-sintered, electrically conductive and oxidation-resistant ceramic material, to a process for producing it and to its use.

Liquid phase-sintered, electrically conductive and oxidation-resistant

The present invention relates to a process for the production of sintered materials comprising BN, sintering additives and at least one compound selected from the group consisting of Si.sub.3 N.sub.4 and SiAlON, wherein the BN component is present in the form of crystalline particles with an average particle size &lt;2 .mu.m and the BN content amounts to between 0.1 and 34 vol-%. In the process, a single phase amorphous Si--B--N component with a specific surface &lt;1.5 m/g and optionally Si.sub.3 N.sub.4 -powder is mixed with oxidic and/or nitridic sintering additives to form a mixture, the mixture is formed into a moulded article, and the moulded article is sintered at temperatures in the range from 1,450.degree. C. to 2,100.degree. C. in an atmosphere which contains N.sub..sub.2.

Process of produciing sintered materials based on Si.sub.3 N.sub.4 /BN

The present invention relates to a process for the production of a dense Si.sub.3 N.sub.4 material by normal pressure sintering of mouldings which have been manufactured from mixtures of Si.sub.3 N.sub.4 powders and sintering additives without being embedded in a powder packing and are sintered at temperatures of 1775.degree. C.+-. 75.degree. C.

Process for production of silicon nitride material

Si.sub.3 N.sub.4 -based sintered compositions containing MgO and optionally other sintering additives, which after sintering, has a flexural strength level at room temperatures of .gtoreq.800 MPa, measured by the four-point bending method, and a Weibull modulus of &gt;15, is produced by mixing MgO, any additional sintering additives and Si.sub.3 N.sub.4 powder to form a mixture, calcining the mixture in an oxygen-free atmosphere to obtain a pre-synthesis mixture, and adding the pre-synthesis mixture to uncalcined Si.sub.3 N.sub.4 powder which is then sintered.

Sintered material based on Si.sub.3 N.sub.4 and processes for its

High-strength Si.sub.3 N.sub.4 -based material with a narrow range spread of values for mechanical properties useful for producing thick-walled ceramic parts for internal combustion engines, thick-walled ceramic fittings or cutting tools is produced by molding a powder-form starting mixture comprising powdered Si.sub.3 N.sub.4, finely divided elemental silicon and sintering additives, and subsequently heat treating the mixture to obtain a sintered molding very near the theoretical density of the material.

Process for production of a Si.sub.3 N.sub.4, based material

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Coburg, Germany

Gerhard Wötting