Messerschmitt-bolkow-blohm Gmbh

Messerschmitt-bolkow-blohm Gesellschaft MIT Beschrankter Haftung

Gerhard Winterling

Max Koniger

A semiconductor device for converting light into electric energy comprises at least one layer of amorphous silicon with a surface thereof which is intended to be exposed to light covered by a cover layer of polycrystalline silicon. The use of the polycrystalline silicon increases the current yield in the blue light range of the solar spectrum. A method of producing such a semiconductor device is also disclosed.

Semiconductor device for converting light into electric energy

A semiconductor solar cell for the conversion of light to electric energy comprises at least one layer of amorphous silicon, a cover layer of poly-crystalline silicon and an anti-reflection layer of semiconducting transparent oxide of a refractive index of less than 2.8. The cover layer of poly-crystalline silicon has an optical density ##EQU1## or it may be ##EQU2## The cover layer is arranged between the anti-friction layer and the layer of amorphous silicon.

Amorphous silicon solar cell having improved antireflection coating

A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.

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Ottobrunn, Germany

Gerhard Winterling