Azur Space Solar Power Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Telefunken Electronic Gmbh

Albert-ludwigs-universtät

Gerhard Strobl

Daniel Fuhrmann

Frank Dimroth

Matthias Meusel

Andreas Bett

Wolfgang Guter

Gregor Keller

Wolfgang Koestler

Klaus-Dieter Rasch

Sascha Van Riesen

Rüdiger Löckenhoff

Alexandre William Walker

Ron Dietrich

Clemens Wächter

Wolfgang Köstler

A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 &#x3bc;m-2000 &#x3bc;m, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 &#x3bc;m to the first semiconductor contact region.

Stacked III-V semiconductor photonic device

A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 &#x3bc;m or at least 20 &#x3bc;m with respect to each highly doped semiconductor contact region.

III-V semiconductor pixel X-ray detector

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Monolithic multiple solar cells

A stack-like III-V semiconductor product comprising a substrate and a sacrificial layer region arranged on an upper side of the substrate and a semiconductor layer arranged on an upper side of the sacrificial layer region. The substrate, the sacrificial layer region and the semiconductor layer region each comprise at least one chemical element from the main groups III and a chemical element from the main group V. The sacrificial layer region differs from the substrate and from the semiconductor layer in at least one element. An etching rate of the sacrificial layer region differs from an etching rate of the substrate and from an etching rate of the semiconductor layer region at least by a factor of ten. The sacrificial layer region is adapted in respect of its lattice to the substrate and to the semiconductor layer region.

Stack-like III-V semiconductor product and production method

A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.

Stacked integrated multi-junction solar cell

A multi-junction solar cell having a Ge or GaAs substrate, as well as a solar cell structure having several subcells deposited on the substrate, the substrate having peripheral side faces, and the solar cell structure having a peripheral circumferential surface, which runs spaced apart from the side faces. To prevent oxidation and penetration of moisture, the circumferential surface of the solar cell structure is coated with a protective, electrically insulating first coating under essential exclusion of the upper surface facing the rays, or that without encroaching on the solar cell structure, the side faces of the substrate are coated with a protective, electrically insulating second coating or that both the side faces of the substrate as well as the circumferential surface of the solar cell structure are coated with a third coating by essential exclusion of the upper surface facing the rays.

Multiple solar cell and method for manufacturing the same

Growing community of inventors

Stuttgart, Germany

Gerhard Strobl