Infineon Technologies Ag

Gerhard Poeppel

Irmgard Escher-Poeppel

Thorsten Meyer

Edward Fuergut

Werner Schustereder

Guenther Ruhl

Georg Tempel

Hans-Joerg Timme

Werner Robl

Paul Ganitzer

Herbert Roedig

Franz Schreier

Harald Wiedenhofer

Thomas Hirsch

Dieter Kohlert

Stephanie Fassl

Reinhard Schachtner

The disclosure describes to techniques for detecting field failures or performance degradation of circuits, including integrated circuits (IC), by including additional contacts, i.e. terminals, along with the functional contacts that used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, temperature and impedance. These electrical characteristics may be representative of a certain failure mode and may be an indicator for circuit state-of-health (SOH), while the circuit is performing in the field.

Predictive chip-maintenance

Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

Method of reducing a sheet resistance in an electronic device, and an electronic device

According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

Sensor arrangement for particle analysis and a method for particle analysis

In various embodiments, a method for the computer-aided determination of deviation patterns during at least one of the production or testing of a multiplicity of dies is provided. The dies are uniquely identified. The method may include determining, for each die of the multiplicity of dies and for at least one measurement process of a plurality of measurement processes which are applied to at least one portion of the dies, a measurement value which was determined in the measurement process for the respective die; and carrying out a blind source separation using the measurement values, thereby determining the deviation patterns for the dies.

Methods and devices for the computer-aided determination of deviation patterns during the production and/or testing of a multiplicity of dies and computer program products

A device can be used for establishing gas concentrations in an examination volume. A radiation source is configured to generate an electromagnetic beam. A beam guiding apparatus is arranged downstream of the radiation source. The beam guiding apparatus is configured to set a plurality of variations of beam guidance of the beam entering the beam guiding apparatus in an observation plane in the examination volume. A spectrometer is arranged downstream of the beam guiding apparatus. The spectrometer is configured to carry out a spectral analysis of the beam leaving the beam guiding apparatus. An evaluation unit is configured to establish in the observation plane a 2D concentration distribution for one or more gases in the examination volume on the basis of the spectral analysis for different variations of beam guidance.

Device for determination of gas concentration

A method of manufacturing a semiconductor device is disclosed. One embodiment includes placing multiple semiconductor chips onto a carrier, each of the semiconductor chips having a first face and a second face opposite to the first face. An encapsulation material is applied over the multiple semiconductor chips and the carrier to form an encapsulating body having a first face facing the carrier and a second face opposite to the first face. A redistribution layer is applied over the multiple semiconductor chips and the first face of the encapsulating body. An array of external contact elements are applied to the second face of the encapsulating body.

Semiconductor device

The semiconductor device comprises a semiconductor chip defining a first face and a second face opposite to the first face, the semiconductor chip comprising at least one contact element on the first face of the semiconductor chip, an encapsulating body encapsulating the semiconductor chip, the encapsulating body having a first face and a second face opposite to the first face, a redistribution layer extending over the semiconductor chip and the first face of the encapsulating body and containing a metallization layer comprising contact areas connected with the contact elements of the semiconductor chip, and an array of external contact elements located on the second phase of the encapsulating body.

A semiconductor package includes a semiconductor chip having an integrated circuit, a functional element electrically coupled with the integrated circuit, and an array of contact elements connected with the integrated circuit and the functional element. The functional element is configured to protect the integrated circuit from transient voltage.

According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

Spin device

A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

Method of making discrete trap memory (DTM) mediated by fullerenes

With the aid of the method for fault analysis according to the invention, a wide variety of chips are mapped by means of a transformation onto at least one uniform comparable wafer map. This transformation or resealing enables a chip-area-independent assessment of the products or the fabrication processes. The method for fault analysis according to the invention furthermore has the advantage that the information thus obtained can be stored very compactly in corresponding wafer databases and is thus available for further evaluations.

Growing community of inventors

Wuppertal, Germany

Gerhard Poeppel