Infineon Technologies Austria Ag

Infineon Technologies Ag

Infineon Technologies Americas Corp.

Gerhard Noebauer

Martin Poelzl

Josef Hoeglauer

Oliver Blank

Angela Kessler

Sergey Yuferev

Ralf Otremba

Ralf Siemieniec

Joachim Krumrey

Cesar Augusto Braz

Franz Hirler

Petteri Palm

Robert Illing

Michael Hutzler

Christoph Kadow

Maximilian Roesch

David Laforet

Cedric Ouvrard

Robert Fehler

Donald Dibra

Marc Probst

Florian Gasser

Anton Mauder

Joachim Mahler

Armin Willmeroth

Khalil Hosseini

Martin Henning Vielemeyer

Li Juin Yip

Markus Dinkel

Robert Paul Haase

Thomas Feil

Sylvain Leomant

Stefan Sedlmaier

Erwin Huber

Chooi Mei Chong

Ashita Mirchandani

Elvir Kahrimanovic

Lutz Goergens

Tien Lai Tan

Alessandro Ferrara

Sergey Ananiev

Gilles Delarozee

Olivier Guillemant

Christian Gruber

Marco Puerschel

Thomas Oszinda

Hao Zhuang

A transistor arrangement includes a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each comprising a source region integrated in a first region of the semiconductor body, a plurality of sense transistor cells each comprising a source region integrated in a second region of the semiconductor body, a first source node electrically connected to the source region of each of the plurality of the load transistor cells via a first source conductor, and a second source node electrically connected to the source region of each of the plurality of the sense transistor cells via a second source conductor, a resistance of the second source conductor is different from a resistance of the first source conductor, and the second source conductor comprises an elongated span with a plurality of meanders in which the connection line reverses its direction.

Transistor arrangement with a load transistor and a sense transistor

A method of forming a semiconductor module comprises forming a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Bots transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.

Method of forming a semiconductor module

A transistor arrangement includes a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each comprising a source region integrated in a first region of the semiconductor body, a plurality of sense transistor cells each comprising a source region integrated in a second region of the semiconductor body, a first source node electrically connected to the source region of each of the plurality of the load transistor cells via a first source conductor, and a second source node electrically connected to the source region of each of the plurality of the sense transistor cells via a second source conductor, and wherein a resistance of the second source conductor is different from a resistance of the first source conductor.

A semiconductor module is provided that includes a low side switch, a high side switch and a control chip. The low side switch and the high side switch are arranged laterally adjacent one another and coupled by a switch node connector to form a half bridge circuit. The switch node connector includes two or more branches that have an arrangement with respect to the low side switch and to the high side switch and that each have a cross-sectional area.

Semiconductor module having a multi-branch switch node connector

A semiconductor package includes a semiconductor die having opposing first and second main surfaces, a first power electrode on the first main surface and a second power electrode on the second main surface, a first lead having an inner surface attached to the first power electrode and a distal end having a first protruding side face extending substantially perpendicularly to the first main surface of the die, a second lead having an inner surface attached to the second power electrode and a distal end having a second protruding side face extending substantially perpendicularly to the second main surface of the die, and a mold compound enclosing at least part of the die and at least part of the first and second leads. The first lead includes a recess positioned in an edge of the inner surface. The second lead includes a recess positioned in an edge of the inner surface.

Semiconductor package, semiconductor module and methods for manufacturing a semiconductor package and a semiconductor module

A semiconductor device includes a semiconductor die having a vertical transistor device with a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a second surface opposing the first surface. A first metallization structure is located on the first surface and includes at least one source pad coupled to the source electrode, at least one drain pad coupled to the drain electrode and at least one gate pad coupled to the gate electrode, A second metallization structure is electrically insulated from the semiconductor die by the electrically insulating layer.

Semiconductor device

In an embodiment, a semiconductor module includes a low side switch and a high side switch. The low side switch and the high side switch are arranged laterally adjacent one another and coupled in series between a ground package pad and a voltage input (VIN) package pad of the semiconductor module and form a half bridge configuration having an output node. The semiconductor module further includes a first capacitor pad coupled to ground potential and a second capacitor pad coupled to a VIN potential. The first capacitor pad is arranged vertically above the low side switch and the second capacitor pad is arranged vertically above the high side switch.

Semiconductor module

In an embodiment, a semiconductor device includes: a main transistor having a load path; a sense transistor configured to sense a main current flowing in the load path of the main transistor; and a bypass diode structure configured to protect the sense transistor and electrically coupled in parallel with the sense transistor. A sense transistor cell of the sense transistor includes a sense trench and a sense mesa. The sense trench and a bypass diode trench of the bypass diode structure form a common trench. The sense mesa and a bypass diode mesa of the bypass diode structure form a common mesa.

Semiconductor device having a main transistor, a sense transistor, and a bypass diode structure

In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure. The metallization structure includes a first conductive layer above the first surface, a first insulating layer above the first conductive layer, a second conductive layer above the first insulating layer, a second insulating layer above the second conductive layer and a third conductive layer above the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

Semiconductor device having a metallization structure

A semiconductor module includes a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Both transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.

A semiconductor module is provided that includes a low side switch, a high side switch and a control chip. The low side switch and the high side switch are arranged laterally adjacent one another and coupled by a switch node connector to form a half bridge circuit. The switch node connector includes two or more branches that have an arrangement with respect to the low side switch and to the high side switch and that each have a cross-sectional area. The arrangement and the cross-sectional area of the two or more branches are selected so as to homogenise the current density distribution within the switch node connector.

The application relates to a semiconductor switch element, including: a first vertical transistor device formed in a substrate and having a source region formed on a first side of the substrate and a drain region formed on a second side of the substrate vertically opposite to the first side; a second vertical transistor device formed laterally aside the first vertical transistor device in the same substrate and having a source region formed on the first side of the substrate and a drain region formed on the second side of the substrate; a conductive element arranged on the second side of the substrate and electrically connecting the drain regions of the vertical transistor devices; and a trench extending vertically into the substrate at the second side of the substrate, wherein at least a part of the conductive element is arranged in the trench.

Semiconductor switch element and method of manufacturing the same

In an embodiment, a semiconductor device is provided that includes a main transistor having a load path, a sense transistor configured to sense a main current flowing in the load path of the main transistor, and at least one bypass diode structure configured to protect the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.

Semiconductor device having a main transistor, a sense transistor and at least one bypass diode structure

A method of current detection includes providing a transistor arrangement which comprises a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each having a source region integrated in a first region of the semiconductor body, a plurality of sense transistor cells each having a source region integrated in a second region of the semiconductor body, a first source node electrically connected to the source region of each of the plurality of the load transistor cells via a first source conductor, and a second source node electrically connected to the source region of each of the plurality of the sense transistor cells via a second source conductor; and detecting a first current flowing between the drain node and the first source node of the transistor arrangement, wherein detecting the first current includes measuring a second current flowing between the drain node and the second source node of the transistor arrangement.

In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure located on the first surface. The metallization structure includes a first conductive layer on the first surface, a first insulating layer on the first conductive layer, a second conductive layer on the first insulating layer, a second insulating layer on the second conductive layer and a third conductive layer on the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

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Villach, Austria

Gerhard Noebauer