Infineon Technologies Ag

Silicon Storage Technology, Inc.

Gerhard Metzger-Brueckl

Alfons Dehe

Arnaud Walther

Johann Strasser

Guenther Ruhl

Wolfgang Lehnert

Rudolf Berger

Juergen Wagner

Nhan Do

Roland Rupp

Xian Liu

Mandana Tadayoni

Yueh-Hsin Chen

Stephan Wege

Willem-Jan Toren

Nadia Miridi

Cecile Bernardi

Liz Cuevas

Florence Guyot

Henry Om'mani

Hans-Joachim Schulze

Andreas Wiesbauer

Francisco Javier Santos Rodriguez

Carsten Ahrens

Ulrich Krumbein

Chien-Sheng Su

Andre Brockmeier

Uwe Hoeckele

Rudolf Lehner

Tobias Franz Wolfgang Hoechbauer

Matteo Piccin

Chieng-Sheng Su

A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.

Carrier, laminate and method of manufacturing semiconductor devices

A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Method of manufacturing a template wafer

A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.

Double-membrane MEMS component and production method for a double-membrane MEMS component

A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.

Method for sealing an access opening to a cavity and MEMS component comprising a sealing element

A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

Wafer composite and method for producing a semiconductor component

A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.

MEMS component and production method for a MEMS component

This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

Wafer composite and method for producing semiconductor components

In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state.

MEMS microphone

A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.

Microelectromechanical microphone

In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.

In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.

MEMS device and MEMS vacuum microphone

A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate.

Growing community of inventors

Geisenfeld, Germany

Gerhard Metzger-Brueckl