Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Other

Pnsensor Gmbh

Messerschmitt-boelkow-blohm Gmbh

Pndetector Gmbh

Gerhard Lutz

Rainer Richter

Josef Kemmer

Lothar Strueder

Lothar Struder

Ladislav Andricek

Peter Lechner

Heike Soltau

Peter Holl

Adrian Niculae

Bianca Schweinfest

Wofgang Wismeth

Werner Kohlmann

Thomas Gebhart

Lothar Strüder

Rainer H Richter

The invention concerns a radiation entry window () for a radiation detector (), in particular for a semiconductor drift detector (), with a flat window element (), which is at least partially permeable for the radiation to be detected by the radiation detector (), as well as with a window frame (), which laterally frames the window element (), wherein the window frame () consists of a semiconductor material and is considerably thicker than the window element (). (FIG.)

Radiation entry window for a radiation detector

The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h&#xb7;f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (&#x2296;), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (&#x2296;), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS). The invention provides for the semiconductor drift detector to be optionally operable in a first operating mode or in a second operating mode, wherein the semiconductor drift detector in the first operating mode measures the photon energy of the incident photons (h&#xb7;f), whereas the semiconductor drift detector in the second operating mode measures the signal charge carrier current. Furthermore, the invention encompasses a corresponding operating method.

Semiconductor drift detector and corresponding operating method

The invention relates to a DEPFET transistor () for detecting a radio-generated signal charge () and for generating an electronic output signal in a manner dependent on the detected signal charge () according to a predetermined characteristic curve. The invention provides for the characteristic curve to have a degressive characteristic curve profile in order to combine a high measurement sensitivity in the case of small signal charges () with a large measurement range through to large signal charges ().

DEPFET transistor having a large dynamic range

The invention relates to an avalanche photodiode () for detecting radiation, including a semiconductor substrate (), an upper diode layer (), an oppositely doped, laterally delimited lower diode layer (), an avalanche region situated between the upper diode layer () and the lower diode layer (), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer () at the underside () of the semiconductor substrate (), a laterally delimited quenching resistance layer () arranged in the semiconductor substrate () between the lower diode layer () and the contact-making layer (), wherein the quenching resistance layer () quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode () arranged laterally alongside the laterally delimited lower diode layer (), such that the depletion electrode () depletes the semiconductor substrate () laterally alongside the laterally delimited lower diode layer (), while the quenching resistance layer () is screened from the depletion electrode () by the lower diode layer () and is therefore not depleted.

Avalanche photodiode

The invention relates to a radiation detector () for detecting low-intensity radiation, especially for detecting individual photons. The radiation detector includes a plurality of rows of image cells () with respective pluralities of image cells () disposed one after the other and respective signal outputs (). The radiation to be detected generates signal charge carriers in the individual image cells (), the charge carriers being transported along the rows of image cells to the respective signal output (). A plurality of output amplifiers () are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers () include respective avalanche amplifiers ().

Radiation detector for detecting low-intensity radiation by means of avalanche amplification

The invention relates to a semiconductor detector, in particular a pnCCD detector, for radiation detection, including a guard ring () and a readout anode () arranged inside the guard ring () for reading out radiation-generated signal charge carriers (e&#x2212;), and also including a clearing contact () arranged outside the guard ring () for removing the collected signal charge carriers (e&#x2212;) from the readout anode (). According to the invention, the semiconductor detector furthermore includes a gap () in the guard ring () and also a controllable gate () which is arranged over the gap () in the guard ring () and makes the gap () in the guard ring () permeable or impermeable to the signal charge carriers (e&#x2212;) to be removed, depending on an electrical actuation of the gate ().

Semiconductor detector for radiation detection, and associated operating method

The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

Semiconductor structure

Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.

Semiconductor structure, particularly in a semiconductor detector, and associated operating method

The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (), which are placed inside a semiconductor substrate (), at least one connecting conductor (M), which is guided over the semiconductor electrodes (), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate () between the semiconductor electrodes () and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

Conductor crossover for a semiconductor detector

Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body () of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (); and a counterelectrode arrangement () which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement () comprises a two-dimensional main electrode () and at least one barrier electrode () which are electrically insulated from each other, and wherein the barrier electrode (), of which there is at least one, is connected to a voltage source () and is designed such that a blocking voltage is applied to it relative to the semiconductor body (), with said blocking voltage exceeding the blocking voltage of the main electrode ().

Semiconductor detector with optimised radiation entry window

The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

Avalanche radiation detector

Solar lamp for outdoor use, in particular a garden lamp, road or street lamp or such, consisting of one or more solar module, and a housing with a storage means for electric energy (battery), which is electrically connected to the solar module, and one or more luminous body, whereby between the battery and the luminous body a circuit is provided, which reacts to signals from a light sensor attached to the solar lamp, and which enables or disables the electrical connection between the battery and the luminous body depending on the degree of brightness/darkness, whereby the housing is provided with two or more walls of different orientation which do not converge parallel to each other, and whereby one or more solar modules are arranged on each wall, or that the walls are formed by solar modules.

Solar lamp for outdoor use

A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.

Strip detector

Integrated horizontal unipolar transistor having a doped layer forming

In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.

Growing community of inventors

Munich, Germany

Gerhard Lutz