Siemens Aktiengesellschaft

Infineon Technologies Ag

Cree Gmbh

Gerhard Lohninger

Ulrich Krumbein

Andreas Wiesbauer

Alfons Dehe

Marc Fueldner

Bernd Goller

Rudolf Lachner

Johann Peter Forstner

Niccoló De Milleri

Walter Zimmermann

Giordano Tosolini

Lothar Johannes Musiol

Klaus-J&uuml;rgen Sch&ouml;pf

Klaus-Jurgen Schopf

A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.

MEMS assembly

Electronic apparatus having an antenna chip with a substrate and an antenna structure, and a method of producing the same. The antenna chip is integrated or packaged in a package having a clip mounting surface for mounting the antenna chip, and an encapsulating material. The encapsulating material typically is a plastic mold used in the industrial packaging of integrated circuits. Between the antenna structure and the chip mounting surface, a first void is disposed in the substrate.

Packaged antenna and method for producing same

In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes a cap disposed on the top surface of the substrate, such that a cavity disposed on a surface of the cap overlies the first cavity in the substrate.

System and method for wafer level packaging

The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.

Semiconductor device and method for producing same

An oscillator structure includes at least one oscillator circuit and at least one resonator. The oscillator circuit is disposed on a support and the resonator is situated essentially within the support and/or is a constituent part of the support. The resonator is preferably formed by an electrical conductor and the oscillator circuit is preferably formed by an integrated electronic circuit.

Oscillator structure having resonator disposed below oscillator circuit

An amplifier circuit has a first transistor and a second transistor of a first conductivity type, which are operated in a cascode circuit together with a first resistor. In addition, the amplifier circuit includes a first capacitor, which precedes the control input of the first transistor. A third transistor of a second conductivity type is provided, whose control input is connected to one end of the controlled path of the second transistor and whose controlled path is connected on one end to a second supply potential. A fourth transistor of the second conductivity type is provided, whose control input is connected to the other end of the controlled path of the third transistor and whose controlled path is connected on one end to the control input of the third transistor. A second resistor is connected between the control input of the fourth transistor and one terminal of the first capacitor. Finally, a third resistor is connected between the other end of the controlled path of the fourth transistor and the other terminal of the first capacitor.

Amplifier circuit

An automatic lamp control device in which a Doppler radar module, a switching unit for switching a lamp circuit on and off, a circuit configuration for evaluating Doppler radar module signals and for producing signals for controlling the switching unit, and a power supply unit for supplying current to the Doppler radar module and to the circuit configuration are provided on a printed circuit board configuration. The lamp control device reacts to movements within the transmitting and receiving range of the Doppler radar module. The range is independent of the ambient temperature. The lamp control device can be configured to save space, in such a way that it can be integrated completely in a standard flush-mounted box.

Automatic lamp control device

A transistor amplifier stage, in particular an RF amplifier stage with an npn amplifier transistor, which is coupled with its base to an alternating voltage input terminal, with its emitter to a fixed potential, and with its collector to an alternating voltage output terminal. An active operating point stabilization unit with a first and a second pnp transistor is provided between a direct voltage input terminal and the base of the npn amplifier transistor.

Transistor amplifier stage

A Doppler radar module, having an operating frequency of about 2.45 GHz, is constructed in microstrip line technology and has a very small construction size. The Doppler radar module includes a planar antenna, a multilayer circuit board having a circuit for the transmission and reception of microwaves, and a housing made of metal. The planar antenna has a planar dipole whose radiating edges are shorter than their spacing from one another, and a substrate whose thickness is greater than 3 mm. This combination of the antenna and the multilayer circuit board on which the antenna is fastened, makes possible the small construction size with simultaneous excellent functional characteristics, such as high sensitivity with low transmission power and low emission of harmonics.

Doppler radar module

A frequency mixer for a Doppler radar module with directional recognition, can be operated with a single transmitting and receiving antenna. It is thereby possible to create a Doppler radar module with low space requirements even for transmitting and receiving frequencies below 5 GHz. In the frequency mixer, a first microstrip line is coupled to a first terminal of a first diode and a second microstrip line is coupled to a first terminal of a second diode. The two microstrip lines are connected to each other through a capacitor. An antenna is coupled to the first microstrip line and an oscillator is coupled to the second microstrip line. Second terminals of each of the diodes are connected to a fixed potential in an electrically conductive manner. A phase comparator is coupled to the two microstrip lines.

Frequency mixer for a doppler radar module

The circuit employs two bipolar transistors, five resistors and a capacitor and can be primarily utilized as a broadband pre-amplifier and also as an oscillator or a mixer. A first transistor is connected to the circuit input and ground. A second transistor is connected to the collector of the first transistor and the supply voltage. One circuit output is connected to the second transistor. Another circuit output is connected to the first transistor via a resistor. The emitter of the first transistor is connected to the second transistor via a second resistor. A third resistor is connected between the base and collector of the first transistor. A fourth resistor is connected between the base and collector of the second transistor.

Integrated microwave-silicon component

A Doppler radar module constructed using micro-stripline technology is used in motion sensors and includes a local oscillator stabilized with a dielectric resonator that feeds a microwave antenna via a mixer that is connected in series. The transmission signal is emitted from the microwave antenna and is reflected back from an object where it is received by the antenna and forwarded to the mixer. The mixer mixes the reflected signal with a portion of the oscillator signal to form a Doppler signal.

Doppler radar module using micro-stripline technology

A voltage-controlled microwave oscillator having a field effect transistor (1) as an amplifier and having a varactor diode (2) as a frequency-determining element has high output power and a large enough frequency sweep in the microwave frequency range that S-parameter scatters of the active components have optimally little influence on the characteristic data of the oscillator. The varactor diode (2) is preceded by a tunable micro stripline filter (3) and the source electrode of the field effect transistor (1) is directly connected to ground in order to form a parallel feedback with the micro stripline filter (3).

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Munich, Germany

Gerhard Lohninger