Siemens Aktiengesellschaft

Osram Opto Semi-Conductors Gmbh Co. Ohg

Gerhard Franz

Jochen Heinen

Bernhard Stegmueller

Ralf Dietrich

A method for the production and formation of microscopic semiconductor light emitting diodes Is set out. The method comprises the steps of: producing a semiconductor light emitting device ( ) including a pn-junction ( ) and metallization layers ( ); applying an etching mask ( ) with a preset structure on one side of the semiconductor device ( ), whereby the masked areas of the arrangement form and correspond to the diodes to be formed ( ); applying a carrier ( ) on the other side of the semiconductor device ( ); vertically etching the semiconductor material in the openings of the etching mask ( ) to the carrier ( ) and thereby producing a diode arrangement containing a multiple number of diodes ( ) below the masked areas. In addition, the method further comprises: removing the etching mask ( ); providing an accommodating device ( ) containing slots ( ) with an arrangement and form that correspond to the numerous diodes, whereby the slots are suited for the reception of the diodes ( ) therein; engaging the diode arrangement into the accommodating device ( ); and removing of the carrier ( ). This method can be used for the production of a LED display device having a high pixel density.

Method for formation and production of matrices of high density light emitting diodes

A method for dry etching of a semiconductor substrate includes producing convex structures on a surface of a semiconductor wafer by using a suitable masking and a suitable etchant. A thick photoresist layer is applied to a semiconductor wafer and structured. The structured photoresist layer is liquified by the influence of temperature to produce a spherical structure and is then hardened as an etchable masking. The semiconductor wafer structured with the photoresist layer is etched in plasma at etching speeds being similar for the semiconductor material and the photoresist, for transferring a convex structure of the photoresist layer to the semiconductor wafer, during etching down of the photoresist layer.

Method for dry etching of a semiconductor substrate

An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface of the substrate lying opposite the waveguide. In one embodiment, a second substrate is secured on the first substrate and one of the substrates has a recess for receiving the lens and the second substrate can have a recess aligned with the lens for receiving an end of an optical fiber.

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Munich, Germany

Gerhard Franz