International Business Machines Corporation

Gerhard E Schmid

Johann Greschner

Johann W Bartha

Georg Kraus

Thomas Bayer

Gerhard Trippel

Werner Steiner

Holger Hinkel

Olaf Wolter

Peter Pleshko

Karl Heinz Probst

Ulrich Kuenzel

Gerhard Kaus

Jurgen Kempf

Volker Wolf

The invention generally relates to the technical field of devices using the effect to emit electrons out of a solid into vacuum due to high electric field strength. Such devices are usually called field emission devices. The invention relates more specifically to the structure of a field emission device, to the method of fabricating a field emission device, and to the use of a multitude of field emission devices in the technical field of flat panel displays. The inventive structure of a field emission device (15) comprises an individual series resistor for each electron emitting tip (1), wherein the series resistor is formed by the tip (1) itself. The tip (1) comprises a body (9) of a first material with high resistivity and an at least partial coating (7) of a second material with low work function, wherein the body (9) of the first material forms the series resistor and the coating (7) of the second material provides for electron emission. The method for fabricating a field emission device (15) uses depositing and sacrificial layer etch back techniques to provide easy and precise control of tip height and shape and also easy and precise control of the tip-to-gate distance and geometry.

Method of fabricating a field emission device

Resonant sensor for determining multiple physical values

Field emission device with series resistor tip and method of

A structure of openings is produced in two or more layers of silylated, polyimide photoresist. Openings in subsequent layers, which overlap previous openings, are of larger size. Then the structure is transferred to an organic substrate using oxygen plasma etching with up to 3% CF.sub.4. The smallest opening transferred to the substrate extends through the substrate.

Method for producing a multi-step structure in a substrate

An optical storage disk consists of a glass substrate (1) into which guide tracks (3) for servo-controlling the focussed light beams are directly stamped by a hot stamp process. After stamping, the glass substrate is thermally quenched in the stamping device to increase its breaking resistance through thermal curing. In order to achieve uniform guide tracks over the entire surface of an optical storage disk, flexible stamp stencils (35) in a flexible holder (34) are used whose curvature can be changed by applying hydro-static pressure. Suitable stamp stencils consist of monocristalline silicon disks with surface hardening, or of metal disks, structured in photolithographic processes. The stamp lands are made with bevelled edges to facilitate the separating of stamp and glass substrate after cooling.

System for stamping an optical storage disk

Method of manufacturing an optical Storage disk

The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

PECVD (plasma enhanced chemical vapor deposition) method for depositing

The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers. In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

For making rails in workpieces for magnetic head sliders for sensors of magnetizable media, anodic oxidation of highly pure aluminum substrates is applied. For that purpose, the respective surface of the substrates is covered with a mask cover which leaves uncovered the zones in the substrate surface area which are intended for the forming of rails. By means of anodic oxidation of the aluminum in the exposed regions, rail layer regions of oxide are formed which after the removal of the mask cover can themselves be used as an etching mask in order to provide a recessed region between two respective rails by means of chemical wet etching.

Method of making magnetic head sliders

A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.

Structure with a silicon body having through openings

Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation. As a result one process step can be saved, namely, the production of the protective layer by thermal oxidation prior to ion implantation.

Method of making semiconductor device structures by means of ion

Multi-layer magnetic thin film disks comprising a synthetic resin layer on an aluminum-containing substrate and an overlying metallic magnetic layer, are liable to have pin holes in the synthetic resin layer caused by galvanic corrosion of the aluminum in the substrate. The pin holes are passivated by aluminum oxide produced therein by anodically oxidizing the aluminum of the substrate in an electrolytic bath, the electric voltage of which is well below the normal passivation voltage for aluminum.

Growing community of inventors

Stetten, Germany

Gerhard E Schmid