Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Osram Opto Semiconductors Gmbh

Joanneum Research Forschungsgesellschaft Mbh

Gerhard Domann

Michael Popall

Erik Beckert

Barbara Stadlober

Ruth Houbertz-Krauss

Matthias Klein

Siegfried Bauer

Vesna Müller

Daniela Collin

Doris Heinrich

Anja Haase

David O'brien

Ursula Haas

Angelika Schmitt

Christian Vedder

Martin Zirkl

Markus Krause

Sebastian Nippgen

Matthias Rehberger

Matthias Mitlacher

Sönke Steenhusen

Falk Kemper

Timo Grunemann

Carola Cronauer

Uta Helbig

A method for producing an optoelectronic component is described with the steps of providing monomeric structural units, providing nanoparticles in a liquid medium, mixing the monomeric structural units and the nanoparticles in the liquid medium so that a starting sol is formed, introducing an acid into the starting sol to adjust a pH value, at least partial condensation of the monomeric structural units to form a network, wherein the nanoparticles are at least partially covalently bonded to the network, so that a sol-gel material is formed, applying the sol-gel material to a semiconductor chip, curing the sol-gel material to form a coating material. Furthermore, an optoelectronic component is specified.

Method for producing an optoelectronic component and optoelectronic component

The present invention relates to a special heteropolymer, namely a silicic acid (hetero)poly(co)condensate with positive-resist behavior which is distinguished by polycondensation or copolycondensation of specially modified silanes. The invention relates likewise to monomeric silanes from which the corresponding heteropolymers, i.e. the silicic acid (hetero)poly(co)condensates, can be produced. The silicic acid (hetero)poly(co)condensates according to the invention can be used for a photoresist which has positive-resist behavior. In addition, the invention relates to corresponding methods both for the production of the silanes, the silicic acid (hetero)poly(co)condensates or a method for photochemical structuring of the photoresist according to the invention which is based on the silicic acid (hetero)poly(co)condensates.

Photoresist with positive-resist behaviour, method for photochemical structuring thereof, method for the production of silanes and of silicic acid (hetero)poly(co)condensates with positive-resist behaviour and also silicic acid (hetero)poly(co)condensates

The invention relates to a semiconductor component having a metal-insulator structure (MIS) which contains as basic components a substrate, a layer made of an organic semiconductor material and a dielectric layer as insulator. The substrate and/or the dielectric layer made of an inorganic-organic hybrid polymer is chosen from these basic components. In addition, the invention relates to a method for the production of semiconductor components of this type and also to the use of inorganic-organic hybrid polymers for the production of semiconductor components.

Semi-conductor component, component, method for the production thereof and use of inorganic-organic hybrid polymers for producng semi-conductor components

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Wuerzburg, Germany

Gerhard Domann