Robert Boschgmbh

Gerhard Conzelmann

Karl Nagel

Gerhard Fiedler

Hartmut Seiler

Walter Kohl

Heinz Pfizenmaier

Klaus Streit

Andreas Junger

Karl Staiger

Helmut Schneider

Volker Dudek

Ulrich Fleischer

Ludger Olbrich

Wolfgang Appel

Helmut Keller

Dietmar Haack

Horst Gschwendtner

Gerhard Fieldler

A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emitter resistors cause a stabilized, uniform current distribution both over the various partial-emitter regions, and within the partial-emitter regions, and bring about an improved current carrying capacity, as well as improved high-frequency properties, particularly in view of the finite magnitude of the extrinsic base resistance.

Transistor component having an integrated emitter resistor

A monolithically integrated circuit in the packed state has at least one characteristic value and/or at least one function which is able to be varied by applying at least one striking potential to at least two of the standard terminal connections leading to the outside of the integrated circuit.

Programming details of a programmable circuit

In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.

Method of making metallization for semiconductor device

Precision reference voltage source

A monolithic integrated power transistor chip includes a plurality of transistor cells arranged in two opposite and mutually spaced rows. Each cell has emitter- and collector connection spots arranged side-by-side and connected to corresponding branch conductors directed by rows of connection points extending along opposite edges on the upper surface of the chip.

Power transistor monolithic integrated structure

Power supply system

Interference protected electronic apparatus

Current regulator

Voltage-regulator for generator

Electronic circuit device

High-frequency power transistor

Voltage regulator for a generator

A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

Monolithic integrated semiconductor means to reduce power dissipation of

Multiple-cell transistor with base and emitter fuse links

Growing community of inventors

Leinfelden-Oberaichen, Germany

Gerhard Conzelmann