Lam Research Corporation

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Thorsten B Lill

Meihua Shen

Hui-Jung Wu

John Hoang

Bart Jan Van Schravendijk

Yang Pan

Nagraj Shankar

Mark Naoshi Kawaguchi

Gowri Kamarthy

Ananda K Banerji

Kevin M McLaughlin

Jialing Yang

Nathan Musselwhite

Jay E Uglow

Hao Chi

Aaron Lynn Routzahn

Nicholas Dominic Altieri

Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Film stack simplification for high aspect ratio patterning and vertical scaling

A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.

Self-aligned vertical integration of three-terminal memory devices

Growing community of inventors

Saratoga, CA, United States of America

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