Sarnoff Corporation

Sofics Bvba

Sarnoff Europe

Gerd Vermont

Benjamin Van Camp

Steven Thijs

Olivier Marichal

Wybo Geert

Pieter Vanysacker

The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple the different fingers or SCRs to decrease the multi-triggering problem and to increase the ESD-performance of the circuit. Additionally, a boost circuit can be introduced or additionally multiple SCRs can be coupled inherent through a common base.

Electrostatic discharge protection circuit

The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region disposed between the source and the drain regions. The transistor device further includes at least one isolation gate formed in at least one of the interleaved fingers. The device can further include a bulk connection coupled to at least one of the source, drain and gate regions via through at least one of diode, MOS, resistor, capacitor inductor, short, etc. The bulk connection is preferably isolated through the isolation gate.

Bulk resistance control technique

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Ruiselede, Belgium

Gerd Vermont