Huettinger Elektronik Gmbh & Co. Kg

Trumpf Huttinger Gmbh + Co. Kg

Hüttinger Elektronik Gmbh & Co. Kg

Gerd Hintz

Thomas Kirchmeier

Michael Glück

Christoph Hofstetter

Michael Glueck

Ekkehard Mann

Hans-Juergen Windisch

Hanns-Joachim Knaus

Christoph Gerhardt

Hans-Jürgen Windisch

In one aspect, operating a vacuum plasma process system including a plasma discharge chamber is accomplished by generating a main plasma in the discharge chamber in a first operating state, and generating an auxiliary plasma in the discharge chamber in a second operating state. Generating the main plasma includes generating a main plasma power with a first number of RF power generators, and generating an auxiliary plasma power with a second number of RF power generators, such that the second number is smaller than the first number.

Method for operating a vacuum plasma process system

Determining a high frequency operating parameter in a plasma system including a plasma power supply device coupled to a plasma load using a hybrid coupler having four ports is accomplished by: generating two high frequency source signals of identical frequency, the signals phase shifted by 90&#xb0; with respect to one another; generating a high frequency output signal by combining the high frequency source signals in the hybrid coupler; transmitting the high frequency output signal to the plasma load; detecting two or more signals, each signal corresponding to a respective port of the hybrid coupler and related to an amplitude of a high frequency signal present at the respective port; and based on an evaluation of the two or more signals, determining the high frequency operating parameter.

Determining high frequency operating parameters in a plasma system

Workpieces in a vacuum chamber are treated by receiving a mains voltage from a voltage supply network; generating at least one intermediate circuit voltage; generating a first RF signal of a basic frequency, and of a first phase position, from the at least one intermediate circuit voltage; generating a second RF signal of the basic frequency, and of a second phase position, from the at least one intermediate circuit voltage; and coupling the first and the second signal and generating an output signal for the vacuum chamber using a 3 dB coupler.

Vacuum plasma generator

A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network. The output network is arranged on a printed circuit board. The output network can therefore be designed low priced and accurately.

Plasma supply device

The power output of an RF plasma supply device is controlled by producing at least a first and second RF power signal by means of a respective RF generator, coupling at least two RF power signals into a coupled RF power, and distributing the coupled RF power between a plasma power that is to be supplied to a plasma load and an equalizing power that is to be supplied to an equalizing load. The power output is controlled by adjusting the levels and/or the phase position of the RF power signals in such a manner that, for plasma power in the range between a predefined lower power limit and a predefined nominal power, an insignificant portion of the coupled RF power constitutes the equalizing power and, for plasma power below the predefined lower power limit, a significant portion of the coupled RF power constitutes the equalizing power.

RF plasma supply device

An amplifier arrangement for operation at supply voltages of at least 100V and at output powers of at least 1 kW includes a half-bridge formed from two switching elements connected in series, two supply voltage terminals, and an output connection between the switching elements. A bypass capacitor is in parallel with the switching elements, and a current path is through the switching elements and the bypass capacitor, where the current path has a length of 10 cm or less, the half-bridge and the bypass capacitor are arranged on an area of 30 cm2, and a resonant circuit formed by capacitances and inductances in the current path has a resonance frequency of 100 MHz or greater.

Class D amplifier arrangement

A vacuum plasma generator is used for treating workpieces in a vacuum chamber. The vacuum plasma generator includes a mains connection for connection to a voltage supply network, and at least one mains rectifier. The at least one mains rectifier is connected to at least one first converter that generates at least one intermediate circuit voltage, a first RF signal generator, a second RF signal generator, and at least one 3 dB coupler. The first RF signal generator is connected to at least one intermediate circuit voltage, for generating a first signal of a basic frequency and of a first phase position. The second RF signal generator is connected to at least one intermediate circuit voltage, for generating a second signal of the basic frequency and of a second phase position. The least one 3 dB coupler couples the first and the second signal into an output signal of the generator.

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Pfaffenweiler, Germany

Gerd Hintz