Invisage Technologies, Inc.

Fundacio Institut De Ciencies Fotoniques

Institucio Catalana De Recerca I Estudis Avancats

University of Toronto

Institució Catalana De Recerca I Estudis Avanais

Gerasimos Konstantatos

Edward Hartley Sargent

Larissa Levina

Jason Paul Clifford

Ian Howard

Ethan J D Klem

Frank Koppens

Stijn Goossens

Shiguo Zhang

Paul Cyr

Andras Pattantyus-Abraham

Xihua Wang

Jiang Tang

Aaron Barkhouse

Ratan Debnath

Steven Ashworth McDonald

Illan Kramer

Romain Quidant

Luis Martinez Montblanch

Dominik Kufer

Ivan Nikitskiy

Carles Monasterio

Juan José Piqueras

Sotirios Christodoulou

Raúl Pérez

Juan JoséPiqueras

Iñigo Ramiro

Arup Kumar Rath

Maria Bernechea Navarro

Jianjun Wang

Ethan Jd Klem

María Bernechea Navarro

Onur Ozdemir

Nichole Cates Miller

Steve McDonald

Santanu Pradhan

Alexander Powell

Alexandros Stavrinadis

Maria Bernechea

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C) resulting in a total capacitance (C); —a voltage detector to detect an output voltage (V) stored in the total capacitance (C). The system further comprises means to apply a gate voltage (V) to the gate electrode structure (G, BE) selected to: —make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and —tune the quantum capacitance (C). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Charge sensing device with gate voltage selected to operate around the charge neutrality point and tune the quantum capacitance

The present invention relates to an electronic device, comprising: &#x2014;a GFET; &#x2014;noise suppression means comprising: &#x2014;a modulation unit applying to a gate (G) of the GFET a signal Vwith frequency fto modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency f, &#x2014;a control unit (CU), and&#x2014;a demodulation circuit which is CMOS-implemented and that: &#x2014;comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency f; or&#x2014;is configured to generate and apply a signal Vwith frequency fto a source (S) of the GFET continuously, simultaneously and with a delay tto induce a phase with respect to Vto yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Electronic device and a method for suppressing noise for an electronic device

The present invention relates to an optoelectronic apparatus, comprising: &#x2014;an optoelectronic device comprising: &#x2014;a transport structure (T) comprising a 2-dimensional layer; &#x2014;a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and&#x2014;drain (D) and source (S) electrodes electrically connected to the transport structure (T); &#x2014;a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval thas passed, and during a tthat is at least 10 times shorter than t, wherein tis longer than a predetermined trapping time &#x3c4;. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Optoelectronic apparatus, a reading-out method, and a uses of the optoelectronic apparatus

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (), a dielectric layer (), a transport layer, and a photosensitizing layer (). The transport layer comprises at least a 2-dimensional semiconductor layer (), such as MoS, and the photosensitizing layer () comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Optoelectronic apparatus with a photoconductive gain

The present invention relates to a method for producing a 3D object and to a system adapted to implement the method, wherein the method comprises: &#x2014;providing a powder material (G); &#x2014;providing a radiation absorbent material, in the form of optically resonant particles (P), on a region to be sintered of the powder material; and&#x2014;sintering the region to be sintered of the powder material (G), by exposing to light the optically resonant particles (P) to radiation. The method comprises providing the optically resonant particles (P) according to a distribution and proportion, with respect to the powder material (G) included in the region to be sintered, selected: &#x2014;to disperse the optically resonant particles (P) within the powder material (G) included in said region, and&#x2014;to avoid substantial agglomeration and substantial self-sintering of the optically resonant particles (P).

Method and a system for producing a three-dimensional object

Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E) and second (E) electrodes in physical contact with two respective distanced regions of the film (A).

Method for obtaining an n-type doped metal chalcogenide quantum dot solid-state film, and an optoelectronic device comprising the obtained film

Provided is a light emitting device that includes a substrate; a first electrode formed by a first electrically conductive layer arranged over the substrate; an active light emitting layer arranged over said first electrically conductive layer, and that includes a host matrix and light emitting quantum dots embedded there within; and a second electrode formed by a second electrically conductive layer arranged over the active light emitting layer. The host matrix has charge carrier supplier quantum dots blended with the light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers. Also provided is a spectrometer having the LED and a down-converting film for a LED.

Light emitting device, an optical spectrometer, and a down-converting film for a light emitting device

Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.

Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

The present invention relates to an optoelectronic apparatus comprising: &#x2014;an optoelectronic device comprising: &#x2014;a transport structure (T) comprising a 2-dimensional layer; &#x2014;a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and &#x2014;drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); &#x2014;noise suppression means comprising a modulation unit including: &#x2014;a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of &#x3c9;/2&#x3c0;; and &#x2014;a signal extraction unit to extract a required electric signal, from an output signal, with no components below &#x3c9;/2&#x3c0;. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Optoelectronic apparatus, a method for suppressing noise for an optoelectronic apparatus, and uses thereof

Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Gaze tracking apparatus

The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.

Photovoltaic material and use of it in a photovoltaic device

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Quantum dot optical devices with enhanced gain and sensitivity and methods of making same

The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit. The invention also relates to an optoelectronic system comprising said image sensor and to a method of manufacturing said image sensor.

Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor

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Barcelona, Spain

Gerasimos Konstantatos