Asml Netherlands B.v.

Gerardus Johannes Joseph Keijsers

Klaus Simon

Henricus Wilhelmus Maria Van Buel

Enno Van Den Brink

Hubertus Antonius Marinus Baijens

Johannes Jacobus Matheus Baselmans

Joeri Lof

Heine Melle Mulder

Peter Ten Berge

Joseph Consolini

Willem Richard Pongers

Arnout Johannes Meester

Fransiscus Godefridus Casper Bijnen

Francis Fahrni

Joost Cyrillus Lambert Hageman

Maurice Anton Jaques Teuwen

Johannes Theodoor De Smit

Richard Joseph Travers

Frederick William Hafner

Mattheus Johannes Van Bruggen

Vinyu Greenlee

Johannes Franciscus Roosekrans

Adrianus Hubertus Henricus Van Dijk

David James Butler

Robertus Victorius Maria Scheepens

Patrick Marcel Maria Thomassen

Gabriela Vesselinova Paeva

A lithographic apparatus includes an illumination system configured to provide a first beam of radiation, which forms a first mask illumination region, and configured to substantially simultaneously provide a second beam of radiation, which forms a second mask illumination region. The first and second illumination regions being configured to substantially simultaneously illuminate a same mask. The lithographic apparatus also includes a projection system configured to project the first radiation beam such that it forms a first substrate illumination region and configured to simultaneously project the second radiation beam such that it forms a second substrate illumination region.

Lithographic apparatus and method

According to one of the aspects of the present invention there is provided a substrate carrier arranged to hold a substrate in position using a vacuum, the vacuum being established in a sealed space created between the substrate carrier and the substrate.

An exposure apparatus is provided with a radiation source, a patterning structure, a projection system, a substrate, and a gas flushing system for removing gas from an area between the projection system and the substrate.

Radiation exposure apparatus comprising a gas flushing system

In a method of measuring front to backside alignment error according to one embodiment, a transparent substrate has a plurality of marks on both the front and backside. The relative location of the marks on the front and backside of the substrate is determined to calculate the front to backside alignment error for the whole substrate. In a further embodiment, the substrate is rotated by 180&#xb0; within the plane of the substrate and the front relative location of the marks is again determined.

Alignment method, method of measuring front to backside alignment error, method of detecting non-orthogonality, method of calibration, and lithographic apparatus

In a method according to one embodiment of the invention, a plurality of markers are printed in resist on a substrate at a range of angles relative to a crystal axis of the substrate. The markers are etched in to the substrate using an anisotropic etch process, such that after the etch the apparent positions of the markers are dependent on their orientation relative to the crystal axis. The apparent positions of the markers are measured, and from this information the orientation of the crystal axis is derived.

Substrate, method of preparing a substrate, method of measurement, lithographic apparatus, device manufacturing method and device manufactured thereby, and machine-readable storage medium

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Venlo, Netherlands

Gerardus Johannes Joseph Keijsers