Asml Netherlands B.v.

Gerardus Carolus Johannus Hofmans

Sven Gunnar Krister Magnusson

Hubertus Antonius Geraets

Frank Staals

Hans Van Der Laan

Mark Zellenrath

Hans Butler

Richard Joseph Bruls

Tammo Uitterdijk

Bart Peter Bert Segers

Rene Oesterholt

Jan Hauschild

Hans Erik Kattouw

Hendrikus Alphonsus Ludovicus Van Dijck

Daan Maurtis Slotboom

Orlando Serapio Cicilia

Jeffrey Godefridus Cornelis Tempelaars

A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LP, LP) for exposure field regions (EF, EF) in accordance with surface level measurements (LS, LS) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EF, EF) with focus offsets (FO, FO) defined with reference to the respective focus settings (LP, LP) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO, FO). The calibration uses surface level measurements (e.g., LS()) having a level sensing location (e.g., LSL()) corresponding to the respective target location (TL). Each offset value is thus corrected in the calibration for the local wafer stack unflatness present during exposure.

Calibration method and inspection apparatus

Movements of a lithographic apparatus include dynamic positioning errors on one or more axes which cause corresponding errors which can be measured in the applied pattern. A test method includes operating the apparatus several times while deliberately imposing a relatively large dynamic positioning error at different specific frequencies and axes. Variations in the error in the applied pattern are measured for different frequencies and amplitudes of the injected error across a frequency band of interest for a given axis or axes. Calculation using said measurements and knowledge of the frequencies injected allows analysis of dynamic positioning error variations in frequency bands correlated with each injected error frequency.

Method of measuring properties of dynamic positioning errors in a lithographic apparatus, data processing apparatus, and computer program product

A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50&#xd7; the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

Lithographic apparatus and device manufacturing method

A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.

Method of measuring focus of a lithographic projection apparatus

A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to an embodiment of the invention may result in a focus-versus alignment shift sensitivity up to 50 times higher (typically dX,Y/dZ=20) than conventional approaches.

A method of measuring a lithographic projection apparatus is described. The method includes imaging a verification mark of a patterning device onto a radiation-sensitive layer held by a substrate table of a lithographic apparatus, wherein the verification mark includes at least a first, a second and a third verification structure that have a mutually different sensitivity profile for a dose setting, a focus setting and a contrast setting.

Method of measuring a lithographic projection apparatus

Calibration of spot height offsets in a level sensor is performed on a resist-coated substrate to eliminate process dependencies of substrate position measurements obtained by the level sensor.

Lithographic apparatus, calibration method, device manufacturing method and computer program product

A thick pellicle is allowed to have a non-flat shape and its shape is characterized to calculate corrections to be applied in exposures to compensate for the optical effects of the pellicle. The pellicle may be mounted so as to adopt a one-dimensional shape under the influence of gravity to make the compensation easier.

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Eindhoven, Netherlands

Gerardus Carolus Johannus Hofmans