Università Degli Studi Di Bari

Università Degli Studi Di Bari Aldo Moro

Consiglio Nazionale Delle Ricerche Istituto Processi Chimico Fisici-Ipcf, Sede Di Bari

Gerardo Palazzo

Gaetano Scamarcio

Luisa Torsi

Nicola Cioffi

Antonia Mallardi

Serafina Cotrone

Maria Magliulo

Maria Daniela Angione

Luigia Sabbatini

Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.

Field-effect transistor sensor

A transistor includes at least one conductive layer, at least one gate dielectric layer and at least one semiconducting film deposited on top of a receptor molecule layer previously deposited or covalently linked to the surface of the gate dielectric. The layer of biological material includes single or double layers of phospholipids, layers made of proteins such as receptors, antibodies, ionic channels and enzymes, single or double layers of phospholipids with inclusion or anchoring of proteins such as: receptors, antibodies, ionic channels and enzymes, layers made of oligonucleotide (DNA, RNA, PNA) probes, layers made of cells or viruses, layers made of synthetic receptors for example molecules or macromolecules similar to biological receptors for properties, reactivity or steric aspects.

Method to realize electronic field-effect transistor sensors

Growing community of inventors

Mola di Bari, Italy

Gerardo Palazzo