Rockwell Automation Technologies Incorporated

Teledyne Scientific and Imaging, LLC

Teledyne Licensing, LLC

Honeywell International Inc.

Innovative Technology Licensing LLC

Gerard Sullivan

Jun Jason Yao

Robert J Anderson

Berinder Brar

Amal Ikhlassi

Joshua I Bergman

Gabor Nagy

Lester Joseph Kozlowski

William E Tennant

Majid Zandian

Donald E Cooper

Larry R Adkins

Lisa L Fischer

Roger E DeWames

Mark Field

A James Hughes

Brian T McDermott

Victor Gil

Chris Rau

James R Rau, Deceased

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably &#x2266;10 &#x3bc;m. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

Tiled hybrid array and method of forming

A method of improving the thermal performance of a hybrid assembly which comprises a first die, a second die, and indium bonds which bond and electrically interconnect the first die to the second die. A heat sink plate on which the hybrid assembly is to be mounted is provided. A plurality of indium bumps are deposited on the plate where the assembly is to be mounted. The bottom side of the hybrid assembly is then pressed onto the indium bumps to affix the assembly to the plate. The heat sink plate constrains the lateral coefficient of thermal expansion (CTE) of the second die such that the CTEs of the first and second dies match more closely than they would if the hybrid assembly was not mounted directly to a heat sink plate using indium bumps. The heat sink plate preferably comprises copper tungsten (CuW) or a diamond-metal composite.

Hybrid assembly with improved thermal performance

Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections.

Lateral collection architecture for SLS detectors

A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound.

Process for forming low defect density heterojunctions

A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.

Heterogeneous integration of low noise amplifiers with power amplifiers or switches

A metamorphic high electron mobility transistor having a plurality of high electron mobility transistor layers, a semi-insulating substrate, a ternary metamorphic buffer layer positioned between the semi-insulating substrate and the plurality of high electron mobility transistor layers, the ternary metamorphic buffer layer being AlGaSb such that x is greater than or equal to 0.2 but less than 0.3, a stabilizing layer positioned between the ternary metamorphic buffer layer and the plurality of high electron mobility transistor layers, the stabilizing layer being AlGaSb such that y is greater than 0.2 but less than or equal to 0.3 and y is greater than x, and a nucleation layer interposed between the semi-insulating substrate and the ternary metamorphic buffer layer.

Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs

A slotted file is created by connecting two side walls and a back wall. The side walls have etched grooves facing directly across from each other. The platelet has flanges that fit into the grooves. In one embodiment, a completed cube is formed when the platelets fill the slotted file.

High density 3-D integrated circuit package

A current sensor includes a deflectable member disposed in a magnetic field. Nulling or compensating members may be mechanically coupled to the deflectable member. Feedback or readout devices coupled to the structure provide signals indicative of deflection of the deflectable member under the influence of applied current and the magnetic field. Nulling current applied to the nulling members tends to oppose deflection of the deflectable member. The nulling current may be modulated to drive the feedback signal to a desired level and is used as a basis for calculating the current to be measured. The current may be measured directly upon calibration of feedback devices coupled to the deflectable member or to the nulling members. Arrays of sensors may be coupled to common busses for applying measured and nulling currents to sensors of the arrays and for detecting feedback signals.

Microelectro-mechanical high resolution current sensing apparatus

A photodetector sensitive to ultraviolet wavelengths is capable of single photon sensitivity at room temperatures and video frame rates. It includes (a) a compound semiconductor photodiode, biased below its avalanche breakdown threshold, comprising III-V elemental components and having a bandgap with transition energy higher than the energy of visible photons; and (b) a high input impedance MOS interface circuit, arranged to receive a signal from the photodiode junction and to amplify said signal. Preferably, the photodiode junction is integrated in a first microstructure on a first substrate, and its interface circuit in a second microstructure on a second substrate. Both microstructures are then joined in a laminar, sandwich-like structure and communicate via electrically conducting contacts.

High performance ultraviolet imager for operation at room temperature

A photodetector sensitive to visible and shorter wavelengths is capable of single photon sensitivity at room temperatures and video frame rates. It includes (a) a compound semiconductor photodiode, biased below its avalanche breakdown threshold, comprising III-V elemental components and having a bandgap with transition energy higher than the energy of infrared photons; and (b) a high trans-impedance interface circuit, arranged to receive a signal from the photodiode junction and to amplify said signal. Preferably, the photodiode junction is integrated in a first microstructure on a first substrate, and its interface circuit in a second microstructure on a second substrate. Both microstructures are then joined in a laminar, sandwich-like structure and communicate via electrically conducting contacts.

Room temperature, low-light-level visible imager

High resolution current sensing apparatus

A method is provided for sensing and measuring an electrical current. The current to be measured is applied to a deflectable member in a sensing module in the presence of a magnetic field. Deflection of the member is detected as an indication of the current. A nulling current may be applied to one or more additional deflectable members mechanically linked to the deflectable member. Feedback or readout signals indicative of deflection of the members are monitored. The nulling current is modulated to drive the feedback signals to a desired level. The nulling current value is converted to a value representative of the current to be measured.

Growing community of inventors

Newbury Park, CA, United States of America

Gerard Sullivan