Centre National De La Recherche Scientifique

Freescale Semiconductor,inc.

Centre National De La Recherche Scientifique-Cnrs

Gérard Sarrabayrouse

Augustin Martinez

Philippe Arguel

Jérôme Launay

Françoise Lozes

Jean-Louis Chaptal

Pierre Temple-Boyer

Laurence Morancho-Montagner

Olivier Bouchard

Serge De Bortoli

The invention relates to a device () for detecting a phase difference between two light beams (A,B), said device including: a diffraction grating () which can generate an interference field between the two light beams; and a photodiode () which is arranged to receive the interference field, said diffraction grating being integrated to the photodiode. The invention is characterized in that the diffraction grating is an amplitude grating ().

Integrated monolithic interference detection device

The method of and apparatus for testing a floating gate non-volatile memory semiconductor device comprising an array of cells including floating gates for storing data in the form of electrical charge. The method includes applying a test pattern of said electrical charge to the floating gates, exposing the device to energy to accelerate leakage of the electrical charges out of the cells, and subsequently comparing the remaining electrical charges in the cells to the test pattern. The energy is applied in the form of electromagnetic radiation of a wavelength such as to excite the charges in the floating gates to an energy level sufficient for accelerating charge loss from the floating gates of defective cells relative to charge loss from non-defective cells. The wavelength is preferably in the range of 440 to 560 nm.

Testing non-volatile memory devices for charge leakage

An amplifying device for a sensor () delivering a response in voltage or impedance has a voltage controlling means for the sensor and at least an additional impedance (). The voltage controlling means () is connected to output terminals () of the sensor to maintain a noticeably constant voltage between the terminals. The additional impedance () is connected in series with the sensor within a polarization circuit, between the output terminals () of the device. The amplifying device may be applied to temperatures, irradiation levels and pH measurement.

Amplifier device for sensors

Growing community of inventors

Mouchan, France

Gérard Sarrabayrouse