Thomson Composants Microondes

Thomson-csf Semiconducteurs Specifiques

Gerard Pataut

Pierre Quentin

Stefan Dietsche

The disclosure relates to the servo-control of an electronic circuit that calls for the detection of the power delivered at its output. The disclosed device is essentially constituted by a field-effect transistor with zero bias V.sub.DS mounted between the ground and a matching network at output of the circuit. This transistor behaves either like a capacitor or like a diode. A low-pass filter, connected between the transistor and the network, delivers a detection voltage V.sub.det.

Device for the detection of power at the output of an electronic circuit

A microwave circuit intended for either direct modulation or direct demodulation of a microwave link communications signal is characterized in that a local oscillator (8) is incorporated in the circuit. The local oscillator supplies two signals that are in phase opposition at 180 degrees. Each signal is sent to a phase shifter. The first phase shifter (9) supplies two signals that are in quadrature, at 0 and 90 degrees. The second phase shifter supplies two signals in quadrature at 180 and 270 degrees. The 0 and 180 degree signals are sent to a first mixer (2), while the 90 and 270 degree signals are sent to a second mixer (3). In the case of a modulator, the first and second mixers receive, respectively, in-phase and quadrature signals, and the outputs of the mixers are combined to form a modulated signal. In the case of a demodulator, a modulated signal is applied through a .div.2 divider to inputs of the two mixers, and in-phase and quadrature signals are obtained at respective mixer outputs.

Direct microwave modulation and demodulation device

A circuit dedicated to the stabilization of integrated circuit temperature charactristics is achieved by integrating on the same semiconductor material chip as the integrated circuit and a device comprised of a sensor having at least two resistors (R1, R2 and/or R3, R4) supplied between two voltages (DC1, DC2) used alone or in conjunction with differential circuit structure (T2, T3) supplied by a current source (T1), comprising a transistorized variable load impedance (T4, T5, T6, T7). The resistors have different temperature coefficients, and the output voltage (VA or VB) of the bridge is temperature dependent. The integrated must incorporate a voltage-controlled element (transistor or diode).

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Gif sur Yvette, France

Gerard Pataut