Commissariat a L'energie Atomique

Gerard Merckel

Joseph Borel

Jacques Lacour

Luc Audaire

Bernard Baylac

Pierre Meunier

Guy Rigaux

A reference voltage generator comprising two MOS-type transistors T.sub.1 ' and T.sub.2 ' produced on the same substrate, the channels of these transistors having the respective lengths L.sub.1 and L.sub.2 and the respective widths Z.sub.1 and Z.sub.2, one of the transistors T.sub.2 ' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T.sub.1 ' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and further comprising means for providing the difference in the threshold voltages of the transistors T.sub.1 ' and T.sub.2 ', this difference in threshold voltages representing the reference voltage.

Reference voltage generator

The charge-coupled device comprises at least one transfer electrode connected to a control line for transmitting a transfer signal. The circuit for measuring the charge stored in the device comprises a resistor inserted in the control line and a circuit for integrating the voltage appearing at the terminals of the resistor during application of the transfer signal.

Circuit for measuring the charge stored in a charge-coupled device

The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.

Method of fabrication of a charge-coupled device

Asymmetrical potential wells are created in surface zones of a first doped semiconductor forming a substrate and are of greater depth at the downstream end than at the upstream end in order to ensure unidirectional transfer of the minority carriers. Regions localized at one extremity of the surface zones and constituting the potential wells are formed by a second semiconductor having a forbidden band width which is different from that of the first semiconductor.

Charge-coupled device comprising semiconductors having different

Fabrication of a charge-coupled device

A negative-feedback band-pass amplifier constructed in accordance with the MOS technology comprises an input stage of the summing amplifier type constituted by two MOS transistors having sources connected to each other and to ground and drains connected to each other. The gate of one transistor constitutes the amplifier input and the gate of the other transistor is connected to the amplifier output through the negative feedback resistance. An amplifying chain whose input is coupled with the common drain connection of the input stage and whose output constitutes the amplifier output comprises n identical stages in series. Each stage is of the inverting amplifier type constituted by an MOS transistor mounted with a common source connected to ground and an MOS transistor mounted as a load resistance.

Amplifying integrated circuit in the MOS technology

A charge-coupled device in which the storage and tranfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the even-numbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes. A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.

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Sassenage, France

Gerard Merckel