Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Gerard Billiot

Patrick Villard

Laurent Clavelier

Thierry Poiroux

Guillaume Gourlat

A multimode oscillator comprising: and in which the resonator and the calculators form two self-oscillating loops making the oscillator resonate simultaneously in the two modes.

Multimode oscillator enabling simultaneous monitoring of variations in several resonance frequencies of a resonator

In the field of nanoresonator oscillators or NEMS (nanoelectromechanical systems) oscillators, a circuit is proposed for measuring the oscillation frequency of a resonator, including a phase-locked loop with a frequency-controlled oscillator and a phase comparator. The resonator includes a vibration excitation input and a dynamic polarization input (using strain gauges). The frequency-controlled oscillator applies a polarization frequency f1 to the polarization input. A frequency generator supplies a fixed intermediate frequency FI; a mixer receives the frequencies f1 and FI for producing an excitation frequency f0 that is the sum or difference of f1 and FI. The phase comparator receives the frequency FI and the output signal of the resonator and produces a control signal that is sent to the frequency-controlled oscillator, indirectly locking the oscillation frequency onto the resonant frequency of the resonator.

Circuit for measuring the resonant frequency of nanoresonators

A field effect transistor including: a support layer, a plurality of active zones based on a semiconductor, each active zone configured to form a channel and arranged between two gates adjacent to each other and consecutive, the active zones and the gates being arranged on the support layer, each gate including a first face on the side of the support layer and a second face opposite the first face. The second face of a first of the two gates is electrically connected to a first electrical contact made on the second face of the first of the two gates, and the first face of a second of the two gates is electrically connected to a second electrical contact passing through the support layer. The gates of the transistor are not electrically connected to each other.

Field effect transistor with alternate electrical contacts

This invention relates to an RF transmission-reception device an antenna, a transmission part that includes a power amplifier that outputs an RF signal with modulated power to the antenna, a reception part, a digital processing and interface module, in which the input signal is picked up at the reception part by taking a current sample at the power supply regulator to generate an image current of the current amplitude output by the antenna to the power amplifier.

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St. Nazaire les Eymes, France

Gerard Billiot