Infineon Technologies Ag

Infineon Technologies Austria Ag

Gerald Stocker

Thomas Grille

Thomas Krotscheck Ostermann

Silke Auchter

Clemens Roessler

Johanna Elisabeth Roessler

Ulf Bartl

Elmar Aschauer

Christoph Kovatsch

Bernhard Jakoby

Andreas Tortschanoff

Cristina Consani

Reyhaneh Jannesari

Gerald Puehringer

Clement Fleury

A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.

Sensor and method for detecting guided thermal radiation

A fluid sensor for performing a reference measurement includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a first waveguide section and a first thermal radiation detector on the top main surface region of the support structure; and a cover structure on at least one part of the first waveguide section. The first waveguide section guides a first portion of the thermal radiation emitted by the thermal emitter to the first thermal radiation detector. The first thermal radiation detector detects the guided first portion of the thermal radiation for performing the reference measurement.

Sensor and method for performing a reference measurement with guided thermal radiation

A device for trapping ions includes: a first substrate having an upper multi-layer electrode structure implemented at a top side of the first substrate; a second substrate disposed over the first substrate and having a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate. The one or more first level ion traps includes the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate. A method of controlling trapped ions in a device is also described.

Device having one or more first level ion traps

An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.

Optical resonator system, narrowband mid-infrared radiation source

A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.

Device for contolling trapped ions

Growing community of inventors

Goritschach, Austria

Gerald Stocker