Siemens Aktiengesellschaft

Infineon Technologies Austria Ag

Gerald Sölkner

Markus Schmitt

Winfried Kaindl

Stefan Gamerith

According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a body region, a source region, and a drift region. The method further includes forming a dielectric layer on the epitaxial layer. The dielectric layer is formed thicker above a drift region of the epitaxial layer than above at least part of the body region and the dielectric layer is formed at a temperature less than 950&#xb0; C.

Radiation-hardened power semiconductor devices and methods of forming them

An apparatus and method include using an electro-optic crystal lying on a component surface, the crystal being coated with a cooperating electrode which is transparent to a sampling laser beam to optically measure and image electrical potentials and voltage levels independently of topographical influences.

Growing community of inventors

Ottobrunn, Germany

Gerald Sölkner