Infineon Technologies Austria Ag

Gerald Patterer

Werner Schustereder

Maximilian Roesch

Jyotshna Bhandari

Stanislav Vitanov

The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region including a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode. The gate electrode includes a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region. The gate electrode layer is made of a doped metallically conductive material.

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Kirchbach, Austria

Gerald Patterer