Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Pac Tech Packaging Technologies G.m.b.h.

Gerald Motulla

Ghassem Azdasht

Elke Zakel

Andreas Ostmann

Rolf Aschenbrenner

A method and device are provided for determining a parameter for the reproducible production of raised contact metallizations ( ) on terminal areas of a substrate. Metallization material is deposited in a metallization bath. A test substrate is employed having at least two terminal areas adjacent at a defined spacing. The substrate is introduced into the metallization bath ( ) and the parameter is determined from the variation in an electrical quantity as a consequence of an electrical contact resulting to from the deposition of the metallization material for building up the contact metallizations ( ) on the adjacent terminal areas.

Method and device for determining a parameter for a metallization bath

The present invention relates to a method of forming a structured metallization on a semiconductor wafer, wherein a main surface of the wafer has a passivation layer applied thereto, which is structured so as to determine at least one bond pad. Initially, a metal bump is produced on the at least one bond pad. An activated dielectric is then produced on the areas of the passivation layer on which the structured metallization is to be formed. Finally, metal is chemically deposited directly on the activated dielectric and on the metal bump in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the metal bump are electro-conductively joined.

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Berlin, Germany

Gerald Motulla