Austriamicrosystems Ag

Ams Ag

Ams International Ag

Gerald Meinhardt

Bernhard Löffler

Jochen Kraft

Ewald Wachmann

Ingrid Jonak-Auer

Franz Schrank

Jens Hofrichter

Georg Röhrer

Hubert Enichlmair

Verena Vescoli

Martin Sagmeister

Gernot Fasching

Bernhard LÖFFLER

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

The near-infrared photodetector semiconductor device comprises a semiconductor layer () of a first type of conductivity with a main surface (), a trench or a plurality of trenches () in the semiconductor layer at the main surface, a SiGe alloy layer () in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Near-infrared photodetector semiconductor device

The photodiode device comprises a substrate () of semiconductor material with a main surface (), a plurality of doped wells () of a first type of conductivity, which are spaced apart at the main surface (), and a guard ring () comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring () surrounds an area of the main surface () including the plurality of doped wells () without dividing this area. Conductor tracks () are electrically connected with the doped wells (), which are thus interconnected, and further conductor tracks () are electrically connected with a region of the second type of conductivity. A doped surface region () of the second type of conductivity is present at the main surface () and covers the entire area between the guard ring () and the doped wells ().

Radiation-hard high-speed photodiode device

A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method

A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.

Photodiode with a reduced dark current and method for the production thereof

A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of feedthroughs that extend through the semiconductor body.

Photodiode with integrated semiconductor circuit and method for the production thereof

For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.

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Graz, Austria

Gerald Meinhardt