Aries Gasification, LLC

Other

Phg Energy, LLC

Gerald M Cox

William P Jepson

Paul Cairney

Douglas R Bull

Ross Patten

Brandon Davis

Renus Kelfkens

Chan-Yun Lee

John Kevin Donoghue

Kristel Van Baekel

A large-scale fluidized bed biogasifier provided for gasifying biosolids. The biogasifier includes a reactor vessel with a pipe distributor and at least two fuel feed inlets for feeding biosolids into the reactor vessel at a desired fuel feed rate of more than 40 tons per day with an average of about 100 tons per day during steady-state operation of the biogasifier. A fluidized bed in the base of the reactor vessel has a cross-sectional area that is proportional to at least the targeted fuel feed rate such that the superficial velocity of gas is in the range of 0.1 m/s (0.33 ft/s) to 3 m/s (9.84 ft/s). In operation, biosolids are heated inside the fluidized bed reactor to a temperature range between 900&#xb0; F. (482.2&#xb0; C.) and 1600&#xb0; F. (871.1&#xb0; C.).

Gasification reactor with pipe distributor

A fluidized bed biogasifier is provided for gasifying biosolids. The biogasifier includes a reactor vessel and a feeder for feeding biosolids into the reactor vessel at a desired feed rate during steady-state operation of the biogasifier. A fluidized bed in the base of the reactor vessel has a cross-sectional area that is proportional to at least the fuel feed rate such that the superficial velocity of gas is in the range of 0.1 m/s (0.33 ft/s) to 3 m/s (9.84 ft/s). In a method for gasifying biosolids, biosolids are fed into a fluidized bed reactor. Oxidant gases are applied to the fluidized bed reactor to produce a superficial velocity of producer gas in the range of 0.1 m/s (0.33 ft/s) to 3 m/s (9.84 ft/s). The biosolids are heated inside the fluidized bed reactor to a temperature range between 900&#xb0; F. (482.2&#xb0; C.) and 1700&#xb0; F. (926.7&#xb0; C.) in an oxygen-starved environment having a sub-stoichiometric oxygen level, whereby the biosolids are gasified.

Gasification reactor with discrete reactor vessel and grate and method of gasification

Fluidized bed biogasifier and method for gasifying biosolids

A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator or CMG. The water vapor is generated by introducing O and an H containing forming gas including hydrogen and at least one dilutant gas into the CMG. The water vapor from the CMG is introduced into a reaction chamber with other etchant gasses to treat the surface of a semiconductor device placed within. The flow rate of water vapor out of the CMG and into the reaction chamber may be controlled by controlling the flow rate of the H containing forming gas and the flow rate of the O gas into the CMG.

Method for etching sidewall polymer and other residues from the surface of semiconductor devices

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Cocoa, FL, United States of America

Gerald M Cox