Asml Netherlands B.v.

Gerald Dicker

Everhardus Cornelis Mos

Peter Ten Berge

Franciscus Bernardus Maria Van Bilsen

Hoite Pieter Theodoor Tolsma

Christianus Gerardus Maria De Mol

Leonardus Henricus Marie Verstappen

Paul Jacques Van Wijnen

Wouter Lodewijk Elings

Reiner Maria Jungblut

Chung-Hsun Li

Li Chung-Hsun

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Methods and apparatus for measuring a property of a substrate

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produceddefined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is usedto control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stackedto at least partially recompose the measurement results according to the sample plan.

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced () defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used () to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked () to at least partially recompose the measurement results according to the sample plan.

In a lithographic device manufacturing method, sub-resolution assist features are provided to equalize the intensities of the diffraction orders that form the image of the pattern on the substrate. In the case of bright lines against a dark field used with a positive tone resist for forming trenches at or near resolution, the assist features may comprise narrow lines equidistantly between the feature lines. In this way an improvement of exposure latitude may be obtained without reduction of DOF.

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Taipei, Taiwan

Gerald Dicker