University of Utah Research Foundation

Gerald B Stringfellow

Feng Liu

Jason Merrell

Junyi Zhu

Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.

Use of surfactants to control island size and density

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

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Salt Lake City, UT, United States of America

Gerald B Stringfellow