Taiwan Semiconductor Manufacturing Comp. Ltd.

Georgios Vallianitis

Sai-Hooi Yeong

Yu-Ming Lin

Gerben Doornbos

Mauricio Manfrini

Chun-Chieh Lu

Marcus Johannes Henricus Van Dal

Chih-Yu Chang

Marcus Johannes Hendricus Van Dal

A transistor, an integrated semiconductor device, and methods of making the same are provided. The transistor includes a dielectric layer having a plurality of dielectric protrusions, a channel layer conformally covering the protrusions of the dielectric layer to form a plurality of trenches between two adjacent dielectric protrusion, a gate layer disposed on the channel layer. The gate layerhas a plurality of gate protrusions fitted into the trenches. The transistor also includes active regions aside the gate layer. The active regions are electrically connected to the channel layer.

Protrusion field-effect transistor and methods of making the same

Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.

Ferroelectric MFM capacitor array and methods of making the same

Growing community of inventors

Heverlee, Belgium

Georgios Vallianitis