Tegal Corporation

Motorola Corporation

Georges J Gorin

Gary B Powell

Paul C Lindsey, Jr

Josef Thomas Hoog

Salvatore A Celestino

Stephen E Hilliker

Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive filter network is disclosed which performs the functions of coupling both power supplies to the electrode, isolating the low frequency power supply from the high frequency power supply and attenuating the undesired frequencies produced by mixing of the two frequencies in the non-linear load represented by the reactor.

Plasma reactor apparatus

An improved plasma reactor apparatus and method are disclosed. Improved uniformity of etching and etch rate are achieved in a reactor through the use of electrodes powered at high and low frequencies. In one embodiment of the invention the workpiece which is to be etched rests on an electrode powered at a low AC frequency of about 100 KHz. A second electrode is powered at a high AC frequency of about 13.56 MHz. A third electrode is maintained at ground potential. High and low frequency AC fields acting on a reactant material optimize the dissociation of the reactant material and the ion energy of the plasma generated reactant species.

Plasma reactor apparatus and method

An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue to completion in the reduced power mode.

Apparatus for controlling a plasma reaction

Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for the reactant gases, mixing the gases and dispensing them through a regular array of orifices into the RF field between the plates. The uniformity results from a combination of the uniform field, the uniform dispersion of reactant gases, and the close proximity of the gas dispersal to the work pieces. The capacity of the apparatus can be increased by repeating the parallel plate structure in a stacked array of alternating grounded and RF energized plates.

Reactor apparatus for plasma etching or deposition

An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue the completion in the reduced power mode.

Method for process control of a plasma reaction

A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as both a gas distribution manifold for uniformly injecting reactant gases into the reaction volume and as an exhaust manifold for uniformly withdrawing reaction products from the reaction volume. The two electrodes are so configured that the plasma reaction takes place only between the electrodes; there is no inactive space surrounding the electrodes to fill with plasma. The configuration is thus conservative of both reactants and energy. The bottommost plate which serves as a workpiece holder is movable with respect to the upper plate to permit loading and unloading of workpieces. The uppermost plate is the active RF electrode while the workpiece holder is maintained at a RF ground potential. The uppermost plate has a larger electrode area which effectively imposes a dc offset to the RF field which enhances the uniformity of the etching and decreases the undesirable spread of undercut etching.

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Emeryville, CA, United States of America

Georges J Gorin