Varian Medical Systems, Inc.

Varian Medical Systems Technologies, Inc.

Other

Radiation Monitoring Devices, Inc.

Dpix, LLC

George Zentai

Larry D Partain

Edward J Seppi

Richard E Colbeth

Raisa Pavlyuchkova

Hassan Mostafavi

Kanai S Shah

Ivan Petrov Mollov

Daniel Morf

Richard L Weisfield

Edward G Shapiro

Shuji Yamaoka

Stavros Prionas

William Wei-Yu Yao

Raisa Pavlyunchkova

Paul R Bennett

Methods of obtaining a suspect nodules' sizes and/or growth rate are provided. In one embodiment, the method begins with at a first time: (i) obtaining a first three dimensional (3D) data set cube of voxels of a patient's anatomy including nodules; (ii) creating a second 3D data set cube of the same size as the first where all voxel values are set to zero; (iii) creating multiple Maximum-Intensity-Projection (MIP) images from the first 3D data set cube taken at different angles; (iv) replacing those voxels in the second 3D data set cube with corresponding voxels from the first 3D data set cube that provide non-zero values in the multiple MIP images; and (v) converting data in the second 3D data set cube into closed surface volumes, cross sectional areas or linear dimensions using image segmentation. Data from a second time can be used to determine growth rate.

MIP determination of solid cancer size and size changes based on contrast enhanced MRI and CT imaging

An x-ray imaging device may include a detector array and an x-ray converting layer coupled to the detector array. The detector array and the x-ray converting layer may be configured such that x-rays traverse the detector array before propagating in the x-ray converting layer. The x-ray imaging device may also include a buildup layer behind the x-ray converting layer. The x-ray imaging device may be used as a 'universal' imager for both MV and kV imaging.

Universal kV-MV imagers

Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.

Corrosion barrier layer for photoconductive X-ray imagers

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Megavoltage imaging with a photoconductor based sensor

One embodiment includes an injector pixel array having injector pixels each coupled to the bottom surface of a conductive material having a directional electrical conductivity only in a direction corresponding to a path between the bottom surface and top surface of the conductive material. Each injector pixel includes a semiconductor based switch coupled to a charge or voltage driver to inject a charge or voltage into each injector pixel. Embodiments, also include a detector pixel array having detector pixels each coupled to the bottom surface of the directionally conductive material. Each detector pixel includes a semiconductor based switch coupled to a charge or voltage storage capacitor to detect a charge or voltage at each detector pixel.

Voltage injector and detector using pixel array for printed circuit board testing

An image acquisition deviceincludes a photoconductorto convert an electromagnetic radiation into electrical signals, a first layerorcoupled to the photoconductor. The first layerorincludes an insulatorand a plurality of conductorsorembedded in the insulatorto conduct the electrical signals. A method of making an image acquisition deviceincludes the step of sandwiching a layer including an insulator and a plurality of conductors embedded in the insulator between a photoconductor layer and an electrode.

Photoconductor imagers with sandwich structure

A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and permeated by a polymer material and having microscopic voids is also presented.

Process to reduce the dark current in semiconducting films

An X-ray image acquisition apparatus includes a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes. The photoconductor has a thickness configured to absorb X-ray radiation at a high energy level. The first and second electrodes are configured to create an electric field for transporting charges created in the photoconductor to a pixel unit, thereby allowing charges to be efficiently collected when low or high energy X-ray radiation is used.

Multi energy x-ray imager

A photodetector having a semiconductor conversion layer is described. The photodetector is configured to receive x-rays incident on its substrate with the substrate-side contact biased so that the lowest mobility carrier in the semiconductor conversion layer is collected by the substrate side contact.

Photodetector biasing scheme

An apparatus and method for detecting an electrostatic charge on a flat panel imager pixel array. In one embodiment, the apparatus includes an insulator layer and a flat panel pixel array coupled to a bottom surface of the insulator layer. Each pixel of the pixel array has a storage capacitance, and an electrostatic charge corresponding to a voltage applied through an electrode coupled to a top surface of the insulating layer may be detected from each storage capacitance.

Electrostatic imager

A preamplifier stage with dynamically controllable signal gain in a data signal processing circuit that includes a downstream analog-to-digital signal converter. The level of the data signal subsequent to its preamplification is monitored and the gain of the preamplifier stage is dynamically adjusted in response to such data signal transcending one or more predetermined thresholds. Hence, the effective dynamic range of the preamplifier stage is extended, thereby also effectively extending the dynamic range of the overall system beyond that to which it would have otherwise been limited by the dynamic range of the analog-to-digital signal converter. In accordance with a preferred embodiment of the invention, such a preamplifier is used in an X-ray imaging system such as that using flat panel solid state imaging devices.

Growing community of inventors

Mountain View, CA, United States of America

George Zentai