Intel Corporation

Globalfoundries Inc.

Imec Vzw

George Vakanas

Paul Winer

Leonel R Arana

Sergei L Voronov

James P Mellody

George S Kostiew

Raj Bahadur

Saikumar Jayaraman

Eric Beyne

Eric Jin Li

Luke G England

Edvin Cetegen

George K Chen

Aastha Uppal

Aaron McCann

Tannaz Harirchian

Joeri De Vos

Jaber Derakhshandeh

Yuval Greenzweig

George E Malouf

Shereen Elhalawaty

Luey Chon Ng

Embodiments disclosed herein include an electronics package and methods of forming such electronics packages. In an embodiment, the electronics package comprises a package substrate, and a first die coupled to the package substrate. In an embodiment, a cavity is formed through the package substrate. In an embodiment, the cavity is within a footprint of the first die. In an embodiment, the electronics package further comprises a thermal stack in the cavity. In an embodiment, the thermal stack contacts the first die.

Thermally-optimized tunable stack in cavity package-on-package

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

Thin NiB or CoB capping layer for non-noble metallic bonding landing pads

The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Laser-assisted chemical singulation of a wafer

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a liquid on a region of a die, and then forming an identification mark through the liquid on the die.

Method of fabricating an identification mark utilizing a liquid film assisted by a laser

In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be applied to a bond head coupled with a pick and place tool. Heat may be applied to a bond stage coupled to a carrier for holding the package assembly during processing. An adhesive applied to the lid or package substrate may be allowed to at least partially cure. The method may further include, in an oven, reflowing a thermal interface material (TIM) coupled to the lid and the die, curing the TIM, and/or curing the adhesive, without using clips.

Clipless integrated heat spreader process and materials

A method and apparatus for fabrication of passivated microfluidic structures is disclosed. The method includes providing a substrate having a microfluidic structure formed therein. The microfluidic structure is embedded by an embedding layer. The method further includes passivating the embedded microfluidic structure by locally heating the microfluidic structure surface in a reactive atmosphere, wherein the passivated microfluidic structure is suitable for transporting a fluid. The structure optionally further includes metal pads to form an electrokinetic pump.

Method and apparatus for fabrication of passivated microfluidic structures in semiconductor substrates

A method and apparatus for fabrication of passivated microfluidic structures is disclosed. The method includes providing a substrate having a microfluidic structure formed therein. The microfluidic structure is embedded by an embedding layer. The method further includes passivating the embedded microfluidic structure by locally heating the microfluidic structure surface in a reactive atmosphere, wherein the passivated microfluidic structure is suitable for transporting a fluid.

Growing community of inventors

Tempe, AZ, United States of America

George Vakanas