J. T. Baker, Inc.

Mallinckrodt Baker, Inc.

J. T. Baker Chemical Company

Other

Mallinckrodt, Inc.

George Schwartzkopf

Joseph M Ilardi

Geetha Surendran

David C Skee

Gary M Gray

Paul J Kruger

John B Covington

Kathleen B Gabriel

Gary G Dailey

J T Baker Chemical Co

A method and composition for removing sodium-containing materials such as photoresist from microcircuit substrate material utilizes 1,2-Diaminocyclohexanetetracarboxylic Acid in an organic solvent.

Method and composition for removing sodium-containing material from microcircuit substrates

Alkaline photoresist stripping compositions containing a reducing agent to reduce or inhibit metal corrosion are disclosed. Reducing agents include compounds containing reactive multiple bonds, hydrazine and derivatives thereof, oximes, hydroquinone, pyrogallol, gallic acid and esters thereof, tocopherol, 6-hydroxy-2,5,7,8-tetramethylchroman-2-carboxylic acid, BHT, BHA, 2,6-di-tert-butyl-4-hydroxymethyl-phenol, thiols, salicylaldehyde, 4-hydroxybenzaldehyde and glycol aldehyde dialkylacetals.

Photoresist strippers containing reducing agents to reduce metal corrosion

Alkaline photoresist stripping compositions containing reducing agent to reduce or inhibit metal corrosion. Reducing agents include compounds containing reactive multiple bonds, hydrazine and derivatives thereof, oximes, hydroquinone, pyrogallol, gallic acid and esters thereof, tocopherol, 6-hydroxy-2,5,7,8-tetramethylchroman-2-carboxylic acid, BHT, BHA, 2,6-di-tert-butyl-4-hydroxymethyl-phenol, thiols, salicylaldehyde, 4-hydroxybenzaldehyde and glycol aldehyde dialkylacetals.

Microelectronics wafer substrate surfaces are cleaned to remove metal contamination while maintaining wafer substrate surface smoothness by contacting the wafer substrate surfaces with an aqueous cleaning solution of an alkaline, metal ion-free base and a polyhydroxy compound containing from two to ten --OH groups and having the formula: ##STR1## wherein or in which --R--, --R.sup.1 --, --R.sup.2 -- and --R.sup.3 -- are alkylene radicals containing two to ten carbon atoms, x is a whole integer of from 1 to 4 and y is a whole integer of from 1 to 8, with the proviso that the number of carbon atoms in the polyhydroxy compound does not exceed ten, and wherein the water present in the aqueous cleaning solution is at least about 40% by weight of the cleaning composition.

Cleaning wafer substrates of metal contamination while maintaining wafer

Process for cleaning wafer substrates of metal contamination while maintaining wafer smoothness by contacting the wafer substrates with a cleaning composition comprising an aqueous, metal ion-free base and an amphoteric surfactant and optionally a metal complexing agent and a propylene glycol ether organic solvent.

Aqueous alkaline cleaning solutions for cleaning microelectronic substrates and maintaining substrate surface smoothness comprise a metal ion free base, a nonionic surfactant and a component to reduce or control the pH of the cleaning solution to a pH within the range of from about pH 8 to about pH 10.

PH adjusted nonionic surfactant-containing alkaline cleaner composition

Addition of non-nitrogen containing weak acids to amine-containing alkaline strippers for photoresists produce stripper compositions able to strip highly cross-linked or hardened photoresist films without producing any substantial metal corrosion. Weak acids useful in the stripping compositions include those having a pK in aqueous solution of 2.0 or higher and an equivalent weight of less than about 140 and are employed in an amount to neutralize from about 19% to about 75% of the amine present in the stripper composition.

Alkaline-containing photoresist stripping compositions producing reduced

2-diazo-1-ones are useful deep UV photoresist solubility modification agents exhibiting improved photosensitivity allowing shorter deep UV exposure times to achieve the same extent of photoreaction as with prior art solubility modification agents. The 2-diazo-1-one solubility modification agents when used as photoactive solubility modification components in photoresist compositions permit the photoresist compositions to act as either positive or negative photoresist compositions depending upon the developer employed, namely, as a positive resist when a metal ion containing developer is employed and as a negative resist when a metal ion free developer is employed.

Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification

Photosensitive solubilization inhibitor compounds of the formula ##STR1## wherein: x is an integer equal to the valence or functionality of the radical R, and

Process of deep ultra-violet imaging lithographic resist compositions

Photosensitive solubilization inhibition agents, and deep ultra-violet

Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and as photosensitive solubilizing agents compounds of the formula ##STR1## wherein: R.sub.4 is hydrogen or --C(O)R.sub.5 in which R.sub.5 is an alkoxy group having from 1 to about 20 carbon atoms;

Deep ultra-violet lithographic resist composition and process of using

An improved herbicidal formulation comprising a mixture of the isopropylamine salt of glyphosate and an effective potentiating amount of an ammonium, quaternary alkyl ammonium, alkali metal or alkaline earth metal thiocyanate.

Herbicidal formulation

4-Phenoxy-2-butene derivatives are disclosed as inhibitors of cytokinin plant growth regulatory activity and as possessing seed germination regulatory properties and senescence delaying activity when applied to plants. 4-Phenoxy-2-butene derivatives can also be useful as plant dwarfing agents, agents to retard seedling development or as herbicides.

Growing community of inventors

Franklin Township, NJ, United States of America

George Schwartzkopf