Cree Gmbh

Advanced Technology Materials, Inc.

Other

Candescent Technologies Corporation

Silicon Video, Inc.

George R Brandes

Xueping Xu

Robert P Vaudo

Jeffrey S Flynn

Michael Albert Tischler

Julio Garceran

Bernd P Keller

Charles P Beetz

Barbara E Landini

Shuji Nakamura

Steven P DenBaars

Nicholas William Medendorp, Jr

Arpan Chakraborty

John M Macaulay

Monica Hansen

Ronan P LeToquin

Joan M Redwing

Mark McClear

Christopher J Spindt

Robert D Underwood

Colin D Stanners

Robert W Boerstler

Ronald S Besser

Swayambu V Ramani

John W Steinbeck

Thomas H Baum

James Ibbetson

Glenn M Tom

James V McManus

Sten Heikman

Michael W Geis

Robert M Duboc

Christopher J Curtin

David Keogh

Jonathan C Twichell

Michael A Tischler

John Miller

Philip Moss Platzman

Michael Kelly

Chris S Christos

David M Keogh

Huoping Xin

Michael K Kelly

LED light bulbs include openings in base or cover portions, and optional forced flow elements, for convective cooling. Thermally conductive optically transmissive material may be used for cooling, optionally including fins. A LED light engine may be fabricated from a substrate via planar fabrication techniques and shaped to form a substantially rigid upright support structure. Mechanical, electrical, and thermal connections may be made between a LED light engine and a LED light bulb.

LED light bulbs

A thermal management system for reducing or eliminating heat-mediated degradation of LED performance and/or operating life. The system may include a thermal controller arranged to respond to an LED operating condition, and to responsively limit temperature in the LED. The thermal controller in one implementation includes a bypass circuit containing a bypass control element, such as a varistor, Zener diode, or antifuse device, and arranged to divert current from flowing to the LED so that the LED remains in a cool state, e.g., below 75&#xb0; C. The system may be arranged to (I) at least partially attenuate the power supplied to an LED so as to reduce heat generation in such LED and maintain the LED below a threshold temperature and/or (II) remove heat from the LED to maintain temperature of the LED below a threshold temperature.

LED thermal management system and method

Solid state lighting apparatuses and related methods are described. In certain embodiments, a solid state lighting apparatus adapted to operate with alternating current (AC) received from an AC power source is provided. The lighting apparatus can include a substrate and an array of solid state light emitters arranged on or supported by the substrate. Multiple solid state light emitter sets of the array can be arranged to be activated and/or deactivated at different times relative to one another during a portion of an AC cycle. The lighting apparatus can also include at least one reflective structure arranged between one or more solid state light emitters and at least one driver circuit component, to reduce or eliminate absorption by the driver circuit component(s) of light generated by the solid state light emitter(s).

Solid state lighting apparatuses and related methods

A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.

High voltage low current surface emitting light emitting diode

Solid state lighting apparatuses are adapted to operate with alternating current (AC) received directly from an AC power source. An exemplary apparatus includes a substrate and multiple sets of one or more solid state light emitters disposed over the substrate. Multiple sets of solid state light emitters are configured to be activated and/or deactivated at different times relevant to one another during portions of an AC cycle, and optionally have different duty cycles. Emitter configurations, color combinations, and/or circuit components reduce perceivable flicker, color shifts, and/or spatial variations in luminous flux. Color temperature and/or beam pattern are adjustable. Multiple emitters are arranged along non-coplanar substrate portions.

A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die mounting region. The LED lamp is configured to emit light having a spectral distribution including at least four different color peaks to provide the white light. For example, a first conversion material may at least partially cover the first LED chip, and may be configured to absorb at least some of the light of the first color and re-emit light of a third color. In addition, a second conversion material may at least partially cover the first and/or second LED chips, and may be configured to absorb at least some of the light of the first and/or second colors and re-emit light of a fourth color. Related light fixtures and methods are also disclosed.

Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same

The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (&#x3e;2.5 um) GaN layers of low dopant concentration (&#x3c;1E16 cm) grown on a conductive GaN layer. The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (&#x3c;2 KV) and extremely high breakdown voltage on homo-epitaxial substrates (&#x3e;2 KV).

High voltage switching devices and process for forming same

A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

Laser diode and method for fabricating same

An electronic device including series-connected open failure-susceptible components and re-routing assemblies for directing current through an ancillary current path to maintain operability of the series array despite an open-failed component therein. The re-routing assembly can be constituted as an ancillary circuit containing a bypass control element arranged to maintain the ancillary circuit in a non-current flow condition when none of the open failure-susceptible components has experienced open failure, and to re-route current from a main circuit around an open-failed component therein and through the ancillary circuit and back to the main circuit, to bypass the open-failed component so that all non-failed series components of the main circuit remain operative when electrically energized.

Electronic device including circuitry comprising open failure-susceptible components, and open failure-actuated anti-fuse pathway

A light emitting device (LED) includes a broadband LED chip having a multi-quantum well active region including alternating active and barrier layers. The active layers respectively include different thicknesses and/or different relative concentrations of at least two elements of a semiconductor compound, and are respectively configured to emit light of different emission wavelengths that define an asymmetric spectral distribution over a wavelength range within a visible spectrum. Related devices are also discussed.

Broadband light emitting device lamps for providing white light output

LED light bulbs include openings in base or cover portions, and optional forced flow elements, for convective cooling. Thermally conductive optically transmissive material may be used for cooling, optionally including fins. A LED light engine may be fabricated from a substrate via planar fabrication techiques and shaped to form a substantially rigid upright support structure. Mechanical, electrical, and thermal connections may be made between a LED light engine and a LED light bulb.

A light emission device includes multiple electrically activated solid state emitters (e.g., LEDs) having differing spectral output from one another; and/or phosphor material including one or more phosphors arranged to receive spectral output from at least one of the solid state emitters and to responsively emit a phosphor output, to provide spectral output. In one arrangement, multiple LEDs and multiple phosphors have different peak wavelengths and provide aggregated light output with less than four light emission peaks. In one arrangement, a plot of aggregated output emissions (light intensity versus wavelength) has a non-negative slope between more than two wavelength peaks. In one arrangement, a light emission device generates a user-perceptible transition in color of light at a predetermined time period as an indicative of a need to perform at least one selected task.

Light emission device

Growing community of inventors

Raleigh, NC, United States of America

George R Brandes