The Perkin-elmer Corporation

Hughes Aircraft Company

Integrated Process Equipment Corporation

Ipec Precision Inc.

George N Steinberg

Alan R Reinberg

Charles B Zarowin

Oleg Siniaguine

W Derek Buckley

David A Huchital

Jean Dalle Ave

Non-contact holder for wafer-like articles

Gas discharge apparatus comprising an annular gas-emitting electrode for use with wafer etching systems, and the like. The gas discharge apparatus comprises a housing and an annular electrode having provisions for cooling the electrode having predetermined outer and inner diameters secured to the housing. An inert outer chimney is disposed against a face of the annular electrode adjacent its outer diameter and an inert inner chimney is disposed against the face of the annular electrode adjacent its inner diameter. The inner and outer chimneys confine the gas discharge from the annular electrode to its face. An insulator is secured to the housing that has an opening that permits the flow of etching gas therethrough to produce a radially symmetric flow pattern. The insulator is disposed within the inner chimney and is centered relative to the annular electrode. The nonconducting components of the gas discharge apparatus are typically made of inert materials such as MACOR.RTM. ceramic, magnesium oxide, and magnesium fluoride, for example. The housing may be made of aluminum so that it can be water cooled, for example, to remove heat from the annular electrode during etching, or the electrode may be directly cooled. The gas discharge apparatus introduces the gas at the center of the annular electrode without causing any secondary discharge. Consequently, sufficiently high etch rates are achieved. The annular electrode does not exhibit erosion effects at very high power and very high gas flow rates. The annular electrode provides a removal profile with a relatively high spatial frequency which provides for a finer scale of correction of wafer surfaces.

Solid annular gas discharge electrode

The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77) therebetween such that a gas can flow therethrough. In the preferred embodiment, the inner member (47) and the concentric outer member (45) are both cylindrical in shape, therefore, the gap (77) has an annular configuration. A vertical ducting system is bored within the inner member (47) and directly or indirectly intersects the annular gap (77).

Electrode for use in a plasma assisted chemical etching process

An electrode assembly (10) for use in confined plasma assisted chemical etching includes an electrode (16) having a D.C. voltage source (46) connected thereto in addition to a source (60) of R. F. voltage such that ions formed during during plasma etching process are slowed or repelled from the electrode (16) as well as from a surrounding plasma confining member (18).

Electrode assembly useful in confined plasma assisted chemical etching

Disclosed herein is an electron emitter assembly for an electron gun which includes a first emitter ring, a second emitter ring, a power supply, connectors for connecting the power supply to the two electron emitter rings so that heating current flows from the power supply through the rings, and said rings being mounted so that a magnetic field formed by the second ring counteracts the magnetic field formed by the first ring.

Electron emitter assembly

Apparatus for plasma etching of semiconductor devices. A plasma chamber is inductively coupled to a source of A.C. power wherein the semiconductor devices are etched. Alternately, the semiconductor devices may be etched or stripped at a location downstream of the plasma chamber.

Inductively coupled discharge for plasma etching and resist stripping

Apparatus for the etching of semiconductor devices which includes, in combination, an etching chamber containing the semiconductor device to be etched, an electrodeless etching plasma forming chamber having an inlet connected to a source of continuously flowing etching gas and having an outlet connected to said etching chamber in fluid flow communication; a helical inductive resonator coupler for coupling a source of R.F. electrical power into the electrodeless plasma forming chamber for continuously forming etching plasma from the etching gas flowing therethrough; this inductive resonator coupler including a grounded hollow cylinder of electrically conductive material, with a grounded base member at one end; a helically coiled wire conductor concentrically mounted within the cylinder and spaced from the inner walls thereof; the plasma forming chamber being mounted substantially concentrically within the coil, the end of the coil toward the base member being grounded; and an electrical coupling for applying into the coil an R.F. source of electrical power at a position near, but spaced from, the grounded end thereof.

Apparatus for the etching for semiconductor devices

This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.

High speed plasma etching system

An electrodeless RF excited gas arc lamp for pumping a laser has a lamp envelope in the form of a loop having a continuous bore containing krypton, xenon or argon. Sufficient RF power to maintain a plasma in the gas in the loop is provided by a coil around its circumference so that it is linked by the flux generated by RF voltage through the coil. The laser rod to be pumped is mounted adjacent the loop. A diffuse reflector surrounds the lamp and laser rod to reflect back toward the rod light which does not impinge directly on the rod as well as any impinging light not initially absorbed by the rod.

Growing community of inventors

Westport, CT, United States of America

George N Steinberg