Cornell University

Panasonic Corporation

Cornell Research Foundation Inc.

George Malliaras

Christopher Kemper Ober

Jin-kyun Lee

Alexander Zakhidov

Margarita Chatzichristidi

Hon Hang Fong

Harold G Craighead

Kiyotaka Mori

Jason D Slinker

Jose Manuel Moran-Mirabal

Priscilla Dodson

Hector D Abruna

Priscilla G Taylor

Héctor D Abruna

Yu Jye Foo

Jin-Kyun Lee

Priscilla Taylor

An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical COas the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.

Orthogonal processing of organic materials used in electronic and electrical devices

Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices.

Methods of making patterned structures of fluorine-containing polymeric materials and fluorine-containing polymers

The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes ('iTMCs') such as [Ru(bpy)](PF)]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

Electrospun light-emitting fibers

The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes ('iTMCs') such as [Ru(bpy)](PF.)]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.

An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.

Mobility engineered electroluminescent devices

A laterally configured electrooptical device including: a substrate having a surface; a first semiconductor layer of a first type semiconductor material; a second semiconductor layer formed of a second type semiconductor material different from the first type semiconductor material; a first electrode; and a second electrode. The lower surface of the first semiconductor layer is coupled to a section of the surface of the substrate. The lower surface of the second semiconductor layer is coupled to the upper surface of the first semiconductor layer to form a junction. The first electrode is directly electrically coupled to one side of the first semiconductor layer and the second electrode is directly electrically coupled to an opposite side of the second semiconductor layer. These electrodes are configured such that the lower surface of the first semiconductor layer and/or the upper surface of the second semiconductor layer are substantially unoccluded by them.

Laterally configured electrooptical devices

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Ithaca, NY, United States of America

George Malliaras