Analog Devices,inc.

George M Molnar

Michael W Judy

Xin Zhang

Christopher Needham

Kemiao Jia

John Albert Geen

Jerome F Lapham

Kenneth Flanders

Laura Cornelia Popa

Andrew Proudman

Nikolay Pokrovskiy

Kenneth J Cole

James Timony

Gregory S Davis

Bruce Ma

Mark A Smrtic

A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

Stress-isolated MEMS device comprising substrate having cavity and method of manufacture

A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform.

Stress isolation platform for MEMS devices

Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called 'MEMS last' fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.

Fabrication of tungsten MEMS structures

An integrated circuit metal-oxide-metal capacitor and method of making it which involves a support layer; a first conductive electrode on the support layer; a dielectric film on the first conductive electrode; a second conductive electrode disposed on the dielectric film and formed from the first level metallization interconnect layer of the integrated circuit; an interlevel dielectric layer; a first contact via extending through the interlevel dielectric layer and the dielectric film to the first conductive electrode; a second contact via extending through the interlevel dielectric layer to the second conductive electrode; and first and second terminals formed from the second level metallization interconnect layer of the integrated circuit contacting the first and second vias, respectively.

Integrated circuit metal-oxide-metal capacitor and method of making same

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Westford, MA, United States of America

George M Molnar