Other

Air Products and Chemicals, Inc.

Advanced Semiconductor Materials America, Inc.

Advanced Integration, Inc.

Gec, Inc.

Advanced Semiconductor Materials of America, Inc.

Pan Jit Americas, Inc.

Aspect Systems Inc.

Advanced Semiconductor Materials/am.

George M Engle

Richard S Rosler

Charles Anthony Schneider

Bruce Alan Huling

Michael Kountz

Steven Evers

Ronald James Gibson

A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber. In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.

Delivery of iodine gas

The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.

Formation of photoconductive and photovoltaic films

A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.

A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N, is activated or ionized in a reactor before it is deposited on the substrate.

Method of fabricating semiconductor by nitrogen doping of silicon film

The present invention is a method and apparatus for the dynamic cleaning of semiconductor fabrication equipment and particularly quartzware with thermally activated nitrogen trifluoride wherein the cleaning effluent is safely removed and cleaning by-products isolated or diluted to provide for efficient cleaning and rapid restarts of fabrication equipment so cleaned.

Nitrogen trifluoride thermal cleaning apparatus and process

A method for the dynamic cleaning of semiconductor fabrication equipment and particularly quartzware with thermally activated diluted nitrogen trifluoride at elevated temperatures, typically at the process operation temperature, wherein the cleaning effluent is safely removed and cleaning by-products isolated or diluted to provide for efficient cleaning and rapid restarts of fabrication equipment so cleaned.

Diluted nitrogen trifluoride thermal cleaning process

A disk boat assembly for holding workpieces to be processed within a chemical reaction processing apparatus during the chemical vapor process. The boat assembly includes a pair of electrically conductive rail members held rigidly and radially apart between two dielectric end holding members that electrically isolate the two rail members. A plurality of disk like plates are connected respectively to the two rail members and are interleaved such that adjacent disk plates are electrically isolated. Each disk plate includes pairs of bores formed therein with each pair extending radially outward from the center of the disk. Insertable pins are placed in a respective pair of bores, the distance therebetween of which can be extended by insertion in an additional pair of bores lying further from the center of the disk so that variable diameter workpieces can be held on the broad surfaces of each disk plate.

Apparatus for processing semiconductor wafers or the like

A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.

Metal-silicide deposition using plasma-enhanced chemical vapor deposition

An improved spacer means for separating and inhibiting the shorting together of conductive plates in an RF plasma reactor used in Plasma Enhanced Chemical Vapor Deposition (PECVD) processing of semiconductor devices. The improved spacer means inhibits the accumulation of conductive films on the surface of the separating means by substantially precluding the plasma field, and hence, inhibiting depositions in areas where recessed grooves are in the surface of the separating means. Accordingly, a direct electrical path on the spacer means between the multiple conductive plates of the RF plasma reactor is inhibited. As a result, the reactors can run for longer periods of time and deposit greater thicknesses of conductive films without the conductive plates shorting together causing shutdown of the process.

Spacer for preventing shorting between conductive plates

Method and apparatus for improved uniformity in an externally excited non-thermal chemical reaction process. In the inventive process, the reactant is externally activated for a time short compared with the time during which reactant depletion would otherwise occur. The reactant is then deactivated for a period of time comparable to the transit time across the workload. In this way improved uniformity is obtained by reducing the depletion of the reactant as it flows across the workload.

Method and apparatus for achieving spatially uniform externally excited

Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.

Growing community of inventors

Scottsdale, AZ, United States of America

George M Engle