Lucent Technologies Inc.

Agere Systems Optoelectronics Guardian Corp.

Agere Systems Inc.

Triquint Technology Holding Co.

Agere Systems Guardian Corp.

Other

George John Przybylek

Joseph Michael Freund

Dennis Mark Romero

John William Stayt, Jr

Mindaugas Fernand Dautartas

James Kevin Plourde

Scott L Broutin

Raymond Frank Gruszka

William Andrew Gault

David Alan Ackerman

Utpal Kumar Chakrabarti

Abdallah Ougazzaden

Charles William Lentz

Frank Stephen Walters

Dominic Paul Rinaudo

Padman Parayanthal

John W Stayt

Bettina A Nechay

Paul Sangone Chen

John M Geary

Arthur Mike Sergent

Aaron Eugene Bond

Robert Ewing Behringer

Julie S Eng

Ralph J Diehl, Jr

Nancy Louise Reyes

The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Optoelectronic device and method of manufacture thereof

Laser wavelength stabilization is achieved by locating a low selectivity reference filter in a reference path of a laser beam. The low selectivity reference filter, with a periodicity greater than the control filter, is used together with a lookup table for the reference filter to resolve the uncertainty associated with the multivalued control filter. After the wavelength uncertainty for the control filter is resolved, the laser beam is stabilized based on the response of the control filter, as if the reference filter was not present.

Method and apparatus for stabilizing laser wavelength

A method of measuring the thickness of ultra-thin (e.g., <200 &angst;) oxide formed on a semiconductor device uses a reference sample (i.e., another silicon wafer) which has been pre-processed to include a relatively thick oxide surface layer. The thickness of the reference oxide (t) is measured using any conventional technique (such as an ellipsometer). An ultra-thin oxide is then simultaneously formed on both the reference sample and semiconductor device. The total oxide thickness (T) of the dual-layer structure on the reference sample is then measured (again, using any conventional technique), and the difference between the two measured values (T&minus;t&equals;&dgr;) is defined as the thickness of the ultra-thin oxide layer.

Measurement technique for ultra-thin oxides

A method for electrically coupling thermoelectric cooling (TEC) elements together is described. The TEC elements are encased within an encapsulating material, such as epoxy, and a resist layer is laid on either end of the encapsulating material, covering the ends of the TEC elements. The resist layers are selectively developed to open locations in the resist layers in between adjacent elements. Conductive material, such as gold, is sputter deposited into the locations to provide electrical coupling of the elements.

Method for interconnecting semiconductor elements to form a thermoelectric cooler and a thermoelectric cooler formed therefrom

A method and apparatus for stabilizing the wavelength of a laser are disclosed. The invention provides a way to stabilize a laser for applications in dense wavelength division multiplexing (DWDM) systems where frequency spacing is crucial. The invention accomplishes laser stabilization by generating one or more optical paths which are passed through one or more filters to obtain one or more signals which are a function of frequency. Another optical path which does not contain a filter is generated to obtain a signal which is a function of power. The frequency signal(s) and the power reference signal are then converted from optical to electrical and from analog-to-digital. A microcontroller is then used to normalize one or more selected frequency paths with respect to the optical power path, process the signals via software code, and generate a signal which provides feedback to the laser for stabilization. By using a microcontroller; elements that lead to wavelength or frequency drift, or manufacturing component variations can be taken into account and the input signal to the laser can be adjusted accordingly.

Multiple path digital wavelength stabilization

A system and method for fabricating a thermoelectric cooling (TEC) device and a semiconductor device using such a TEC device are described. Adhesive-containing support structures are used to secure, respectively, positively-doped and negatively-doped TEC elements. The elements are intermeshed and an encapsulating material is applied to the intermeshed array. The support structures are then released and the ends of the encapsulated elements are smoothed and electrically coupled together. If desired, panels are secured to the ends of the elements and a heat sink may also be provided. The TEC device may be used to control and/or tune a laser device.

Method for fabricating thermoelectric coolers and semiconductor devices formed therefrom

A method and apparatus are disclosed for supporting semiconductor devices on a flexible support which includes one or more thermoelectric cooling devices. The thermoelectric cooling devices, which include at least one pair of positively-doped and negatively-doped elements electrically coupled together, are positioned between a pair of flex panels. Each panel has connector sites at which connectors such as solder balls are located. The thermoelectric cooling devices may be arranged between the panels to create two or more device support areas having different temperature regimes. The thermoelectric cooling devices may be connected to the panels by placing the panels, connectors and thermoelectric cooling devices in a reflow chamber, exposing them to a reducing atmosphere, and heating to a temperature sufficient to reflow the connectors.

Flexible semiconductor device support with integrated thermoelectric cooler and method for making same

A method for testing the light emitted by a group of semiconductor light emitting devices arranged to emit light over a testing area, each light emitting device having a p-contact, the method including connecting a plurality of selectively connectable p-contact probes to the p-contacts of respective light emitting devices in the group of light emitting devices, selectively activating one of the light emitting devices in the group of light emitting devices to emit light over the testing area by selectively supplying a predetermined electrical current to the p-contact of the selected light emitting device via its respective p-contact probe, guiding the light emitted by the selected light emitting device via a light funnel having a collection end and a detection end, the collection end being in juxtaposition with all the light emitting devices in the group of light emitting devices, and detecting light exiting the detection end of the light funnel.

Method and apparatus for testing the light output of light emitting devices

A method and apparatus for stabilizing the wavelength of a laser are disclosed. The invention provides a way to stabilize a laser for applications in dense wavelength division multiplexing (DWDM) systems where frequency spacing is crucial. The invention accomplishes laser stabilization by generating an optical path which is passed through a filter to obtain a signal which is a function of frequency. A second optical path which does not contain a filter is generated to obtain a signal which is a function of power. The signals are then converted from optical to electrical and from analog to digital, and a microcontroller is used to normalize the frequency path with respect to the optical power path, process the signals via software code, and generate a signal which provides feedback to the laser for stabilization. By using a microcontroller; elements that lead to wavelength or frequency drift, or manufacturing component variations can be taken into account and the input signal to the laser can be adjusted accordingly.

Two path digital wavelength stabilization

A system for flipping a semiconductor workpiece on its thin edge for microscope inspection of a workpiece facet is disclosed. The system has a holding device attached to a handling block. The holding device picks a workpiece by one of its thin edges. The edge of the workpiece may be attached to the holding device by vacuum. Then an operator rotates the handling block ninety degrees, which in turn rotates the holding device and workpiece ninety degrees. After rotation, one of the workpiece facets faces upward and perpendicular to the microscope for proper inspection of the facet.

Tool for handling a workpiece

A system is provided for removing large semiconductor work pieces from an adhesive film. A pick and place apparatus is provided with a collet bar with elongated sides and opposed ends. A channel extends into a cavity on a lower surface of the collet bar. The channel receives a vacuum. The collet bar is angled from a longitudinal axis of the larger work piece to be removed. The work piece may be aligned with a cylindrical roller located under the adhesive film. The angle is chosen to extend the bar across a majority of the width of the work piece. By lowering the collet bar, a first end contacts the work piece, which may be tilted on the roller. Further lowering of the collet bar tilts the semiconductor work piece up into the same plane as the lower surface of the collet bar.

System and method for using a pick and place apparatus

A demounting apparatus is described which releases semiconductor work pieces from an adhesive support structure. The demounting apparatus includes a conduit with a pair of opposed openings. A support structure is placed over one of the openings with a work piece mounted on a lower surface thereof. A vacuum is exerted on the conduit through a constricted outlet, thereby creating a pressure differential. The lower pressure within the demounting apparatus causes the support structure to elastically deform, thereby reducing its adherence on the work piece. The work piece is dislodged from the support structure and caught by a cushion positioned in the other opening. The cushion is pushed inwardly by the pressure differential. Other structures for releasing the work piece are also disclosed.

Method and apparatus for removing work pieces adhered to a support

A method for unblocking a vacuum collet channel clogged with solder includes moving a solder-clogged collet into contact with a preform of solder, and melting the solder clog and the preform into a single melted mass, cooling the melted mass to solidify it, and moving the collet away from the cooled mass, leaving the clog behind.

Method for unclogging solder-clogged collet using solder preform

A device is provided for cleaving semiconductor products or the like. The device may be formed of an inlet for receiving pressurized gas, an adjustable slot for directing the gas toward the products, and a movable flow control member. According to one aspect of the invention, the flow control member is located within a housing that also defines the inlet and the adjustable slot. A cover may be located on the front of the housing. The cover may have a lower edge that forms one side of the slot. The other side of the slot may be formed by the movable flow control member. The cleave device may have an uncomplicated, compact construction. The cleave device may be operated with a flexible product handling system. That is, the brittle products may be handled within opposed flexible sheets. The sheets may be used to locate the products over a ledge (a cleaving position) where they are bent to cause cleaving along crystal planes initiated at scribe or score lines. Uniform bending forces may applied gently and in a non-destructive fashion across the full widths of the semiconductor products. The pressure and cross sectional dimensions of the sheet flow through the adjustable slot may be precisely controlled, if desired. The invention may be used, for example, to increase production yield by reducing the number of integrated circuits formed with defects due to cracking or splitting of silicon material.

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Douglasville, PA, United States of America

George John Przybylek